Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

B. G. Park; T. D. Lee; T. H. Lee; C. G. Kim; C. O. Kim

doi:10.1063/1.1540141

Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

B. G. Park, T. D. Lee, T. H. Lee, C. G. Kim, C. O. Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The magnetic tunnel junctions (MTJ) with Hf oxide and modified Hf oxide tunnel barriers were fabricated. MTJ's with Hf oxides showed a tunnel magnetoresistance (TMR) ratio of 13% at room temperature and the barrier height was about 1.3 eV. Results showed that the lower TMR ratio of the junction with the Al-Hf oxide than that with the Hf-Al oxide maybe associated with the higher defect density.

Original language	English
Pages (from-to)	6423-6425
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	10 2
DOIs	https://doi.org/10.1063/1.1540141
State	Published - 15 May 2003

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10.1063/1.1540141

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title = "Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers",

abstract = "The magnetic tunnel junctions (MTJ) with Hf oxide and modified Hf oxide tunnel barriers were fabricated. MTJ's with Hf oxides showed a tunnel magnetoresistance (TMR) ratio of 13\% at room temperature and the barrier height was about 1.3 eV. Results showed that the lower TMR ratio of the junction with the Al-Hf oxide than that with the Hf-Al oxide maybe associated with the higher defect density.",

author = "Park, \{B. G.\} and Lee, \{T. D.\} and Lee, \{T. H.\} and Kim, \{C. G.\} and Kim, \{C. O.\}",

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T1 - Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

AU - Park, B. G.

AU - Lee, T. D.

AU - Lee, T. H.

AU - Kim, C. G.

AU - Kim, C. O.

PY - 2003/5/15

Y1 - 2003/5/15

N2 - The magnetic tunnel junctions (MTJ) with Hf oxide and modified Hf oxide tunnel barriers were fabricated. MTJ's with Hf oxides showed a tunnel magnetoresistance (TMR) ratio of 13% at room temperature and the barrier height was about 1.3 eV. Results showed that the lower TMR ratio of the junction with the Al-Hf oxide than that with the Hf-Al oxide maybe associated with the higher defect density.

AB - The magnetic tunnel junctions (MTJ) with Hf oxide and modified Hf oxide tunnel barriers were fabricated. MTJ's with Hf oxides showed a tunnel magnetoresistance (TMR) ratio of 13% at room temperature and the barrier height was about 1.3 eV. Results showed that the lower TMR ratio of the junction with the Al-Hf oxide than that with the Hf-Al oxide maybe associated with the higher defect density.

UR - https://www.scopus.com/pages/publications/0037639889

U2 - 10.1063/1.1540141

DO - 10.1063/1.1540141

M3 - Article

AN - SCOPUS:0037639889

SN - 0021-8979

VL - 93

SP - 6423

EP - 6425

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 10 2

ER -

Magnetic tunnel junctions with Hf oxide and modified Hf oxide tunnel barriers

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