Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films

H. C. Jeon; T. W. Kang; T. W. Kim; Joongoo Kang; K. J. Chang

doi:10.1109/NMDC.2006.4388786

Magnetic and electronic properties of Mn delta-doped (Ga _0.995Mn_0.005)N thin films

H. C. Jeon
, T. W. Kang
, T. W. Kim
, Joongoo Kang
, K. J. Chang

Department of Physics and Chemistry

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga_0.995Mn_0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga_0.995Mn_0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

Original language	English
Title of host publication	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Pages	400-401
Number of pages	2
DOIs	https://doi.org/10.1109/NMDC.2006.4388786
State	Published - 2006
Event	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC - Gyeongju, Korea, Republic of Duration: 22 Oct 2006 → 25 Oct 2006

Publication series

Name	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Volume	1

Conference

Conference	2006 IEEE Nanotechnology Materials and Devices Conference, NMDC
Country/Territory	Korea, Republic of
City	Gyeongju
Period	22/10/06 → 25/10/06

Keywords

(GaMn)N thin film
High Curie temperature
Mn delta-doping

Access to Document

10.1109/NMDC.2006.4388786

Cite this

@inproceedings{043167f1bce54a84a890e87045025091,

title = "Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films",

abstract = "The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.",

keywords = "(GaMn)N thin film, High Curie temperature, Mn delta-doping",

author = "Jeon, \{H. C.\} and Kang, \{T. W.\} and Kim, \{T. W.\} and Joongoo Kang and Chang, \{K. J.\}",

year = "2006",

doi = "10.1109/NMDC.2006.4388786",

language = "English",

isbn = "1424405408",

series = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

pages = "400--401",

booktitle = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC",

note = "2006 IEEE Nanotechnology Materials and Devices Conference, NMDC ; Conference date: 22-10-2006 Through 25-10-2006",

}

Jeon, HC, Kang, TW, Kim, TW, Kang, J & Chang, KJ 2006, Magnetic and electronic properties of Mn delta-doped (Ga _0.995Mn_0.005)N thin films. in 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC., 4388786, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, vol. 1, pp. 400-401, 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC, Gyeongju, Korea, Republic of, 22/10/06. https://doi.org/10.1109/NMDC.2006.4388786

Magnetic and electronic properties of Mn delta-doped (Ga _0.995Mn_0.005)N thin films. / Jeon, H. C.; Kang, T. W.; Kim, T. W. et al.
2006 IEEE Nanotechnology Materials and Devices Conference, NMDC. 2006. p. 400-401 4388786 (2006 IEEE Nanotechnology Materials and Devices Conference, NMDC; Vol. 1).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Magnetic and electronic properties of Mn delta-doped (Ga 0.995Mn0.005)N thin films

AU - Jeon, H. C.

AU - Kang, T. W.

AU - Kim, T. W.

AU - Kang, Joongoo

AU - Chang, K. J.

PY - 2006

Y1 - 2006

N2 - The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

AB - The magnetization curve as a function of the magnetic field as 5 K indicated that the magnetization in the (Ga0.995Mn0.005)N thin film is significantly enhanced due to Mn delta-doping. The magnetization curve as a function of the temperature showed that the Curie temperature of the Mn delta-doped (Ga0.995Mn0.005)N thin film was estimated to be above room temperature. The theoretical results showed that Ga vacancies near the Mn delta-doping layer were likely to cause p-type conductance.

KW - (GaMn)N thin film

KW - High Curie temperature

KW - Mn delta-doping

UR - https://www.scopus.com/pages/publications/50249119027

U2 - 10.1109/NMDC.2006.4388786

DO - 10.1109/NMDC.2006.4388786

M3 - Conference contribution

AN - SCOPUS:50249119027

SN - 1424405408

SN - 9781424405404

T3 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

SP - 400

EP - 401

BT - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

T2 - 2006 IEEE Nanotechnology Materials and Devices Conference, NMDC

Y2 - 22 October 2006 through 25 October 2006

ER -