Low voltage, high performance thin film transistor with HfInZnO channel and HfO₂ gate dielectric

We fabricated thin film transistors (TFTs) using HfInZnO thin films as active channel layers. The thin films of HfInZnO were deposited by co-sputtering from HfO₂ and InZnO targets. The HfInZnO TFTs were investigated according to the radio-frequency power applied to the HfO₂ target. The transistor on and off currents were greatly influenced by the composition of Hf atoms suppressing the formation of oxygen vacancies. The electrical characteristics of the TFTs show a field-effect mobility of 3.53 cm² V^-1 s^-1, a threshold voltage of 1.28 V, an on/off ratio of 1.4× 10^-7, and a subthreshold swing of 95 mV/dec.