Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2

Tae Kwang Eom; Windu Sari; Kyu Jeong Choi; Woong Chul Shin; Jae Hyun Kim; Do Joong Lee; Ki Bum Kim; Hyunchul Sohn; Soo Hyun Kim

doi:10.1149/1.3207867

Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O₂

Tae Kwang Eom
, Windu Sari
, Kyu Jeong Choi
, Woong Chul Shin
, Jae Hyun Kim
, Do Joong Lee
, Ki Bum Kim
, Hyunchul Sohn
, Soo Hyun Kim

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

70 Scopus citations

Abstract

Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C₁₆ H ₂₂ Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O₂ at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO₂, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

Original language	English
Pages (from-to)	D85-D88
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1149/1.3207867
State	Published - 2009

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title = "Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2",

abstract = "Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100\% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).",

author = "Eom, \{Tae Kwang\} and Windu Sari and Choi, \{Kyu Jeong\} and Shin, \{Woong Chul\} and Kim, \{Jae Hyun\} and Lee, \{Do Joong\} and Kim, \{Ki Bum\} and Hyunchul Sohn and Kim, \{Soo Hyun\}",

year = "2009",

doi = "10.1149/1.3207867",

language = "English",

volume = "12",

pages = "D85--D88",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "11",

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TY - JOUR

T1 - Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2

AU - Eom, Tae Kwang

AU - Sari, Windu

AU - Choi, Kyu Jeong

AU - Shin, Woong Chul

AU - Kim, Jae Hyun

AU - Lee, Do Joong

AU - Kim, Ki Bum

AU - Sohn, Hyunchul

AU - Kim, Soo Hyun

PY - 2009

Y1 - 2009

N2 - Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

AB - Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

UR - https://www.scopus.com/pages/publications/70249123822

U2 - 10.1149/1.3207867

DO - 10.1149/1.3207867

M3 - Article

AN - SCOPUS:70249123822

SN - 1099-0062

VL - 12

SP - D85-D88

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O₂

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