Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2

Tae Kwang Eom; Windu Sari; Kyu Jeong Choi; Woong Chul Shin; Jae Hyun Kim; Do Joong Lee; Ki Bum Kim; Hyunchul Sohn; Soo Hyun Kim

doi:10.1149/1.3207867

Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O₂

Tae Kwang Eom, Windu Sari, Kyu Jeong Choi, Woong Chul Shin, Jae Hyun Kim, Do Joong Lee, Ki Bum Kim, Hyunchul Sohn, Soo Hyun Kim

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

68 Scopus citations

Abstract

Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C₁₆ H ₂₂ Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O₂ at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO₂, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

Original language	English
Pages (from-to)	D85-D88
Journal	Electrochemical and Solid-State Letters
Volume	12
Issue number	11
DOIs	https://doi.org/10.1149/1.3207867
State	Published - 2009

Access to Document

10.1149/1.3207867

Cite this

@article{2f08782bff2547afbcd2ddf971f0d2d5,

title = "Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2",

abstract = "Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).",

author = "Eom, {Tae Kwang} and Windu Sari and Choi, {Kyu Jeong} and Shin, {Woong Chul} and Kim, {Jae Hyun} and Lee, {Do Joong} and Kim, {Ki Bum} and Hyunchul Sohn and Kim, {Soo Hyun}",

year = "2009",

doi = "10.1149/1.3207867",

language = "English",

volume = "12",

pages = "D85--D88",

journal = "Electrochemical and Solid-State Letters",

issn = "1099-0062",

publisher = "Electrochemical Society Inc.",

number = "11",

}

TY - JOUR

T1 - Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O2

AU - Eom, Tae Kwang

AU - Sari, Windu

AU - Choi, Kyu Jeong

AU - Shin, Woong Chul

AU - Kim, Jae Hyun

AU - Lee, Do Joong

AU - Kim, Ki Bum

AU - Sohn, Hyunchul

AU - Kim, Soo Hyun

PY - 2009

Y1 - 2009

N2 - Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

AB - Ru thin films were deposited by atomic layer deposition (ALD) through alternating exposures of a metallorganic precursor, C16 H 22 Ru [(η6 -1-isopropyl-4-methylbenzene) (η4 -cyclohexa-1,3-diene)ruthenium(0)] and O2 at 220°C. The growth rate was 0.1 and 0.086 nm/cycle on TiN and thermally grown SiO2, respectively. On both substrates, negligible incubation cycles were observed indicating that Ru nucleation was enhanced compared to the results obtained using the cyclopentadienyl-based Ru precursors. Plan-view transmission electron microscopy analysis revealed the formation of a continuous Ru film with a thickness of ∼3.5 nm after only 50 ALD cycles. The step coverage was approximately 100% over the contact holes (top opening diameter was 89 nm) with a high aspect ratio (24:1).

UR - http://www.scopus.com/inward/record.url?scp=70249123822&partnerID=8YFLogxK

U2 - 10.1149/1.3207867

DO - 10.1149/1.3207867

M3 - Article

AN - SCOPUS:70249123822

SN - 1099-0062

VL - 12

SP - D85-D88

JO - Electrochemical and Solid-State Letters

JF - Electrochemical and Solid-State Letters

IS - 11

ER -

Low temperature atomic layer deposition of ruthenium thin films using isopropylmethylbenzene-cyclohexadiene-ruthenium and O₂

Abstract

Access to Document

Other files and links

Fingerprint

Cite this