Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

Min Suk Oh; Dae Kue Hwang; Jae Hong Lim; Chang Goo Kang; Seong Ju Park

doi:10.1063/1.2236656

Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

Min Suk Oh, Dae Kue Hwang, Jae Hong Lim, Chang Goo Kang, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

A specific contact resistance of 8.9 × 10^-5 Ω cm² was obtained for a Ni/ Au Ohmic layer on the KrF laser-irradiated p-GaN. It was found that laser irradiation increases the hole concentration from 4.1 × 10¹⁷ to 9.7 × 10¹⁷ cm^-3 by removing hydrogen atoms from p-GaN layer. The native oxide was also removed as evidenced by the Ga 2p peak shift and the decrease in the intensity of O 1s peak in the x-ray photoelectron spectra. The formation of a low resistance is attributed to the increase in the hole concentration and the removal of native oxide from p-GaN by laser irradiation.

Original language	English
Article number	042107
Journal	Applied Physics Letters
Volume	89
Issue number	4
DOIs	https://doi.org/10.1063/1.2236656
State	Published - 2006

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title = "Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser",

abstract = "A specific contact resistance of 8.9 × 10-5 Ω cm2 was obtained for a Ni/ Au Ohmic layer on the KrF laser-irradiated p-GaN. It was found that laser irradiation increases the hole concentration from 4.1 × 1017 to 9.7 × 1017 cm-3 by removing hydrogen atoms from p-GaN layer. The native oxide was also removed as evidenced by the Ga 2p peak shift and the decrease in the intensity of O 1s peak in the x-ray photoelectron spectra. The formation of a low resistance is attributed to the increase in the hole concentration and the removal of native oxide from p-GaN by laser irradiation.",

author = "Oh, \{Min Suk\} and Hwang, \{Dae Kue\} and Lim, \{Jae Hong\} and Kang, \{Chang Goo\} and Park, \{Seong Ju\}",

year = "2006",

doi = "10.1063/1.2236656",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

AU - Oh, Min Suk

AU - Hwang, Dae Kue

AU - Lim, Jae Hong

AU - Kang, Chang Goo

AU - Park, Seong Ju

PY - 2006

Y1 - 2006

N2 - A specific contact resistance of 8.9 × 10-5 Ω cm2 was obtained for a Ni/ Au Ohmic layer on the KrF laser-irradiated p-GaN. It was found that laser irradiation increases the hole concentration from 4.1 × 1017 to 9.7 × 1017 cm-3 by removing hydrogen atoms from p-GaN layer. The native oxide was also removed as evidenced by the Ga 2p peak shift and the decrease in the intensity of O 1s peak in the x-ray photoelectron spectra. The formation of a low resistance is attributed to the increase in the hole concentration and the removal of native oxide from p-GaN by laser irradiation.

AB - A specific contact resistance of 8.9 × 10-5 Ω cm2 was obtained for a Ni/ Au Ohmic layer on the KrF laser-irradiated p-GaN. It was found that laser irradiation increases the hole concentration from 4.1 × 1017 to 9.7 × 1017 cm-3 by removing hydrogen atoms from p-GaN layer. The native oxide was also removed as evidenced by the Ga 2p peak shift and the decrease in the intensity of O 1s peak in the x-ray photoelectron spectra. The formation of a low resistance is attributed to the increase in the hole concentration and the removal of native oxide from p-GaN by laser irradiation.

UR - https://www.scopus.com/pages/publications/33746594937

U2 - 10.1063/1.2236656

DO - 10.1063/1.2236656

M3 - Article

AN - SCOPUS:33746594937

SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042107

ER -

Low resistance nonalloyed Ni/Au Ohmic contacts to p-GaN irradiated by KrF excimer laser

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