Abstract
The use of a Ni (50 Å)/indium tin oxide (ITO) (500 Å) bilayer scheme for low-resistance and transparent ohmic contacts to phosphorous doped p -type ZnO was investigated. Ni/indium tin oxide (ITO) (50/500 Å) layers were prepared by electron-beam evaporation. Although the as-deposited Ni/ITO contact was highly resistant and opaque, contact resistance and transparency were greatly improved by a thermal annealing process. A specific contact resistance as low as 6.2×10-5 Ω cm2 was obtained after thermal annealing at 400 °C for 1 min under an N2 ambient. The measured light transmittance of the Ni/ITO (50/500 Å) bilayer on p -type ZnO was determined to be above 80% at a wavelength of 400-600 nm. These results strongly indicate that the use of a Ni/ITO has considerable promise for ZnO-based optical devices.
| Original language | English |
|---|---|
| Article number | 211902 |
| Pages (from-to) | 1-3 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 86 |
| Issue number | 21 |
| DOIs | |
| State | Published - 23 May 2005 |
Bibliographical note
Funding Information:This work was partially supported by the National Research Laboratory Program for Nanophotonic Semiconductors in Korea, the project of photonic industry in Korea, and the Air Force Office Scientific Research in USA.