TY - JOUR
T1 - Low-energy valence photoemission in Ce compounds
T2 - Beyond the Anderson impurity model
AU - Lee, J.
PY - 2000
Y1 - 2000
N2 - The valence level photoemission spectra in the Anderson impurity model for Ce compounds at zero temperature are studied as a function of the photon energy (Formula presented) Most of the former studies on Ce compounds are based on the sudden approximation, which is valid in the high energy region. For the photoemission in the adiabatic limit of the low-energy region, one should consider the dipole matrix elements and the dynamic photoelectron scattering potential. We can manage it by combining the time-evolution formalism and the (Formula presented) scheme in a large f-level degeneracy (Formula presented) This gives the exact results as (Formula presented) In view of experiments on the valence photoemission, two contributions of (Formula presented) and band emissions are mixed. We study the separate (Formula presented) and band contributions (from Ce (Formula presented) and total emission including the interference between two on an equal footing with varying the photon energy. In the (Formula presented)-emission case, we also explore the effects of dynamic scattering potential of the photoelectron with respect to (Formula presented) for which the extended model is proposed. Its effects are found very similar to the core level photoemission in the shake down case with a localized charge transfer excitation. Additionally, we examine the adiabatic-sudden transition in valence level photoemission for the present localized system through the simplified two-level model.
AB - The valence level photoemission spectra in the Anderson impurity model for Ce compounds at zero temperature are studied as a function of the photon energy (Formula presented) Most of the former studies on Ce compounds are based on the sudden approximation, which is valid in the high energy region. For the photoemission in the adiabatic limit of the low-energy region, one should consider the dipole matrix elements and the dynamic photoelectron scattering potential. We can manage it by combining the time-evolution formalism and the (Formula presented) scheme in a large f-level degeneracy (Formula presented) This gives the exact results as (Formula presented) In view of experiments on the valence photoemission, two contributions of (Formula presented) and band emissions are mixed. We study the separate (Formula presented) and band contributions (from Ce (Formula presented) and total emission including the interference between two on an equal footing with varying the photon energy. In the (Formula presented)-emission case, we also explore the effects of dynamic scattering potential of the photoelectron with respect to (Formula presented) for which the extended model is proposed. Its effects are found very similar to the core level photoemission in the shake down case with a localized charge transfer excitation. Additionally, we examine the adiabatic-sudden transition in valence level photoemission for the present localized system through the simplified two-level model.
UR - http://www.scopus.com/inward/record.url?scp=4244082520&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.61.8062
DO - 10.1103/PhysRevB.61.8062
M3 - Article
AN - SCOPUS:4244082520
SN - 1098-0121
VL - 61
SP - 8062
EP - 8072
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 12
ER -