Lateral electron transport through single self-assembled InAs quantum dots

M. Jung, K. Hirakawa, Y. Kawaguchi, S. Komiyama, S. Ishida, Y. Arakawa

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Abstract

The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4. 2 K. Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter >50 nm contain electrons without applying a gate bias.

Original languageEnglish
Article number033106
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
StatePublished - 17 Jan 2005

Bibliographical note

Funding Information:
The authors thank H. Sakaki for discussions and continuous encouragement. This work was partly supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104), the Grant-in-Aid for COE Research (No. 12CE2004), and the IT Program from MEXT.

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