Abstract
The electron transport through single self-assembled InAs quantum dots (QDs) grown on GaAs surfaces has been investigated by using metallic leads with narrow gaps. Clear Coulomb staircases and Coulomb gaps have been observed at 4. 2 K. Coulomb blockade oscillation which reflects single electron charging in the QDs was also observed when a backgate voltage was swept. It is found that uncapped as-grown InAs QDs with diameter >50 nm contain electrons without applying a gate bias.
Original language | English |
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Article number | 033106 |
Pages (from-to) | 1-3 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 86 |
Issue number | 3 |
DOIs | |
State | Published - 17 Jan 2005 |
Bibliographical note
Funding Information:The authors thank H. Sakaki for discussions and continuous encouragement. This work was partly supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104), the Grant-in-Aid for COE Research (No. 12CE2004), and the IT Program from MEXT.