Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

M. Jung; K. Hirakawa

doi:10.1016/j.physe.2003.11.199

Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

M. Jung, K. Hirakawa

Division of Nanotechnology

Research output: Contribution to journal › Conference article › peer-review

Abstract

The transport properties of single InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by metallic leads with nanogaps. It was found that the uncapped InAs QDs grown on the GaAs surfaces show metallic conductivities, indicating that even the exposed QDs are not depleted. On the contrary, it was found that no current flows through the exposed wetting layers. For the case of the QDs covered with GaAs capping layers, clear Coulomb gaps and Coulomb staircases have been observed at 4.2 K.

Original language	English
Pages (from-to)	423-425
Number of pages	3
Journal	Physica E: Low-Dimensional Systems and Nanostructures
Volume	21
Issue number	2-4
DOIs	https://doi.org/10.1016/j.physe.2003.11.199
State	Published - Mar 2004
Event	Proceedings of the Eleventh International Conference on Modulation (MSS11) - Nara, Japan Duration: 14 Jul 2003 → 18 Jul 2003

Bibliographical note

Funding Information:
The authors thank H. Sakaki and Y. Arakawa for their continuous encouragement. This work was supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104 and 15206037), and the Grant-in-Aid for COE research (No. 12CE2004) and IT program from MEXT.

Keywords

Coulomb blockade
InAs quantum dot
Single electron tunneling

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10.1016/j.physe.2003.11.199

Cite this

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title = "Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy",

abstract = "The transport properties of single InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by metallic leads with nanogaps. It was found that the uncapped InAs QDs grown on the GaAs surfaces show metallic conductivities, indicating that even the exposed QDs are not depleted. On the contrary, it was found that no current flows through the exposed wetting layers. For the case of the QDs covered with GaAs capping layers, clear Coulomb gaps and Coulomb staircases have been observed at 4.2 K.",

keywords = "Coulomb blockade, InAs quantum dot, Single electron tunneling",

author = "M. Jung and K. Hirakawa",

note = "Funding Information: The authors thank H. Sakaki and Y. Arakawa for their continuous encouragement. This work was supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104 and 15206037), and the Grant-in-Aid for COE research (No. 12CE2004) and IT program from MEXT.; Proceedings of the Eleventh International Conference on Modulation (MSS11) ; Conference date: 14-07-2003 Through 18-07-2003",

year = "2004",

month = mar,

doi = "10.1016/j.physe.2003.11.199",

language = "English",

volume = "21",

pages = "423--425",

journal = "Physica E: Low-Dimensional Systems and Nanostructures",

issn = "1386-9477",

publisher = "Elsevier B.V.",

number = "2-4",

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TY - JOUR

T1 - Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

AU - Jung, M.

AU - Hirakawa, K.

N1 - Funding Information: The authors thank H. Sakaki and Y. Arakawa for their continuous encouragement. This work was supported by SORST of the Japan Science and Technology Corporation, the Grant-in-Aid from Japan Society for the Promotion of Science (No. 13555104 and 15206037), and the Grant-in-Aid for COE research (No. 12CE2004) and IT program from MEXT.

PY - 2004/3

Y1 - 2004/3

N2 - The transport properties of single InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by metallic leads with nanogaps. It was found that the uncapped InAs QDs grown on the GaAs surfaces show metallic conductivities, indicating that even the exposed QDs are not depleted. On the contrary, it was found that no current flows through the exposed wetting layers. For the case of the QDs covered with GaAs capping layers, clear Coulomb gaps and Coulomb staircases have been observed at 4.2 K.

AB - The transport properties of single InAs quantum dots (QDs) grown by molecular beam epitaxy have been investigated by metallic leads with nanogaps. It was found that the uncapped InAs QDs grown on the GaAs surfaces show metallic conductivities, indicating that even the exposed QDs are not depleted. On the contrary, it was found that no current flows through the exposed wetting layers. For the case of the QDs covered with GaAs capping layers, clear Coulomb gaps and Coulomb staircases have been observed at 4.2 K.

KW - Coulomb blockade

KW - InAs quantum dot

KW - Single electron tunneling

UR - http://www.scopus.com/inward/record.url?scp=1642398534&partnerID=8YFLogxK

U2 - 10.1016/j.physe.2003.11.199

DO - 10.1016/j.physe.2003.11.199

M3 - Conference article

AN - SCOPUS:1642398534

SN - 1386-9477

VL - 21

SP - 423

EP - 425

JO - Physica E: Low-Dimensional Systems and Nanostructures

JF - Physica E: Low-Dimensional Systems and Nanostructures

IS - 2-4

T2 - Proceedings of the Eleventh International Conference on Modulation (MSS11)

Y2 - 14 July 2003 through 18 July 2003

ER -

Lateral electron transport through single InAs quantum dots grown by molecular beam epitaxy

Abstract

Bibliographical note

Keywords

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