Large 1/f noise of unipolar resistance switching and its percolating nature

S. B. Lee; S. Park; J. S. Lee; S. C. Chae; S. H. Chang; M. H. Jung; Y. Jo; B. Kahng; B. S. Kang; M. J. Lee; T. W. Noh

doi:10.1063/1.3237167

Large 1/f noise of unipolar resistance switching and its percolating nature

S. B. Lee, S. Park, J. S. Lee, S. C. Chae, S. H. Chang, M. H. Jung, Y. Jo, B. Kahng, B. S. Kang, M. J. Lee, T. W. Noh

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Abstract

We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation S_R/R² in the low resistance state displayed a power law dependence on the resistance R: i.e., S_R/R² ∝ R^w, where w=1.6±0.2. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, S_R/R² becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.

Original language	English
Article number	122112
Journal	Applied Physics Letters
Volume	95
Issue number	12
DOIs	https://doi.org/10.1063/1.3237167
State	Published - 2009

Bibliographical note

Funding Information:
This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant. No. 2009-0080567). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0).

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@article{44da1d53c4694eda9acb01cff0aa832c,

title = "Large 1/f noise of unipolar resistance switching and its percolating nature",

abstract = "We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation SR/R2 in the low resistance state displayed a power law dependence on the resistance R: i.e., SR/R2 ∝ Rw, where w=1.6±0.2. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.",

author = "Lee, {S. B.} and S. Park and Lee, {J. S.} and Chae, {S. C.} and Chang, {S. H.} and Jung, {M. H.} and Y. Jo and B. Kahng and Kang, {B. S.} and Lee, {M. J.} and Noh, {T. W.}",

note = "Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant. No. 2009-0080567). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0).",

year = "2009",

doi = "10.1063/1.3237167",

language = "English",

volume = "95",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

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TY - JOUR

T1 - Large 1/f noise of unipolar resistance switching and its percolating nature

AU - Lee, S. B.

AU - Park, S.

AU - Lee, J. S.

AU - Chae, S. C.

AU - Chang, S. H.

AU - Jung, M. H.

AU - Jo, Y.

AU - Kahng, B.

AU - Kang, B. S.

AU - Lee, M. J.

AU - Noh, T. W.

N1 - Funding Information: This research was supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science and Technology (Grant. No. 2009-0080567). B.K. and J.S.L. were supported by the KOSEF grant funded by the MOST (Grant No. R17-2007-073-01001-0).

PY - 2009

Y1 - 2009

N2 - We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation SR/R2 in the low resistance state displayed a power law dependence on the resistance R: i.e., SR/R2 ∝ Rw, where w=1.6±0.2. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.

AB - We investigated the 1/f noise of Pt/NiO/Pt capacitors that show unipolar resistance switching. When they were switched from the low to high resistance states, the power spectral density of the voltage fluctuation was increased by approximately five orders of magnitude. At 100 K, the relative resistance fluctuation SR/R2 in the low resistance state displayed a power law dependence on the resistance R: i.e., SR/R2 ∝ Rw, where w=1.6±0.2. This behavior can be explained by percolation theory; however, at higher temperatures or near the switching voltage, SR/R2 becomes enhanced further. This large 1/f noise can be therefore an important problem in the development of resistance random access memory devices.

UR - http://www.scopus.com/inward/record.url?scp=70349653534&partnerID=8YFLogxK

U2 - 10.1063/1.3237167

DO - 10.1063/1.3237167

M3 - Article

AN - SCOPUS:70349653534

SN - 0003-6951

VL - 95

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 12

M1 - 122112

ER -

Large 1/f noise of unipolar resistance switching and its percolating nature

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