Kondo effect in a semiconductor quantum dot coupled to ferromagnetic electrodes

K. Hamaya, M. Kitabatake, K. Shibata, M. Jung, M. Kawamura, K. Hirakawa, T. MacHida, T. Taniyama, S. Ishida, Y. Arakawa

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Abstract

Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B=1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B∼1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.

Original languageEnglish
Article number232105
JournalApplied Physics Letters
Volume91
Issue number23
DOIs
StatePublished - 2007

Bibliographical note

Funding Information:
K.H. acknowledges Y. Utsumi for his fruitful discussions. This work was supported by the Special Coordination Funds for Promoting Science and Technology, the Grant-in-Aid from MEXT, and Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.

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