Abstract
Using a laterally fabricated quantum-dot (QD) spin-valve device, we experimentally study the Kondo effect in the electron transport through a semiconductor QD with an odd number of electrons (N). In a parallel magnetic configuration of the ferromagnetic electrodes, the Kondo resonance at N=3 splits clearly without external magnetic fields. With applying magnetic fields (B), the splitting is gradually reduced, and then the Kondo effect is almost restored at B=1.2 T. This means that, in the Kondo regime, an inverse effective magnetic field of B∼1.2 T can be applied to the QD in the parallel magnetic configuration of the ferromagnetic electrodes.
Original language | English |
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Article number | 232105 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 23 |
DOIs | |
State | Published - 2007 |
Bibliographical note
Funding Information:K.H. acknowledges Y. Utsumi for his fruitful discussions. This work was supported by the Special Coordination Funds for Promoting Science and Technology, the Grant-in-Aid from MEXT, and Collaborative Research Project of Materials and Structures Laboratory, Tokyo Institute of Technology, and the Sumitomo Foundation.