Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

M. H. Cho; H. S. Chang; Y. J. Cho; D. W. Moon; K. H. Min; R. Sinclair; S. K. Kang; D. H. Ko; J. H. Lee; J. H. Gu; N. I. Lee

doi:10.1016/j.susc.2004.01.058

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

M. H. Cho, H. S. Chang, Y. J. Cho, D. W. Moon, K. H. Min, R. Sinclair, S. K. Kang, D. H. Ko, J. H. Lee, J. H. Gu, N. I. Lee

Department of New Biology

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Al₂O₃ incorporated HfO₂ films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al₂O₃ incorporation. The incorporation of Al₂O₃ into the HfO₂ film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO₂ film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO₂ film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al ₂O₃ on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO₂ contributed to Hf silicide formation on the film surface.

Original language	English
Pages (from-to)	L75-L80
Journal	Surface Science
Volume	554
Issue number	1
DOIs	https://doi.org/10.1016/j.susc.2004.01.058
State	Published - 1 Apr 2004

Bibliographical note

Funding Information:
This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs.

Keywords

Photoelectron spectroscopy
Semiconductor-insulator interfaces

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10.1016/j.susc.2004.01.058

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@article{faffe0adb7504d6da1ecec8b931c8ca2,

title = "Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing",

abstract = "Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 {\AA} thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.",

keywords = "Photoelectron spectroscopy, Semiconductor-insulator interfaces",

author = "Cho, {M. H.} and Chang, {H. S.} and Cho, {Y. J.} and Moon, {D. W.} and Min, {K. H.} and R. Sinclair and Kang, {S. K.} and Ko, {D. H.} and Lee, {J. H.} and Gu, {J. H.} and Lee, {N. I.}",

note = "Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs.",

year = "2004",

month = apr,

day = "1",

doi = "10.1016/j.susc.2004.01.058",

language = "English",

volume = "554",

pages = "L75--L80",

journal = "Surface Science",

issn = "0039-6028",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

AU - Cho, M. H.

AU - Chang, H. S.

AU - Cho, Y. J.

AU - Moon, D. W.

AU - Min, K. H.

AU - Sinclair, R.

AU - Kang, S. K.

AU - Ko, D. H.

AU - Lee, J. H.

AU - Gu, J. H.

AU - Lee, N. I.

N1 - Funding Information: This work was supported by the National Program for Tera-level Nanodevices of the Ministry of Science and Technology as one of the 21 century Frontier Programs.

PY - 2004/4/1

Y1 - 2004/4/1

N2 - Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

AB - Al2O3 incorporated HfO2 films grown by atomic layer deposition (ALD) were investigated by high-resolution X-ray photoelectron spectroscopy (HRXPS). The core level energy state of a 15 Å thick film showed a shift to higher binding energy, as the result of a silicate formation and Al2O3 incorporation. The incorporation of Al2O3 into the HfO2 film had no effect on silicate formation at the interface between the film and Si, while the ionic bonding characteristics and hybridization effects were enhanced compared to a pure HfO2 film. The dissociation of the film in an ultrahigh vacuum (UHV) is effectively suppressed compared to a pure HfO2 film, indicating an enhanced thermal stability of Hf-Al-O. Any dissociated Al 2O3 on the film surface was completely removed into the vacuum by vacuum annealing treatment over 850 °C, while HfO2 contributed to Hf silicide formation on the film surface.

KW - Photoelectron spectroscopy

KW - Semiconductor-insulator interfaces

UR - http://www.scopus.com/inward/record.url?scp=12144289927&partnerID=8YFLogxK

U2 - 10.1016/j.susc.2004.01.058

DO - 10.1016/j.susc.2004.01.058

M3 - Article

AN - SCOPUS:12144289927

SN - 0039-6028

VL - 554

SP - L75-L80

JO - Surface Science

JF - Surface Science

IS - 1

ER -

Investigation of the chemical state of ultrathin Hf-Al-O films during high temperature annealing

Abstract

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Keywords

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