TY - JOUR
T1 - Investigation of homogeneity in microstructure and thermoelectric properties at various positions in high-thickness sintered bulks of p-type 20%Bi2Te3–80%Sb2Te3 alloys
AU - Madavali, Babu
AU - Lee, Chul Hee
AU - Han, Jin Gu
AU - Kim, Dong Hwan
AU - Kim, Jong Tae
AU - Song, Gian
AU - Lee, Jin Kyu
AU - Hong, Soon Jik
N1 - Publisher Copyright:
© 2021, The Author(s), under exclusive licence to Springer Science+Business Media, LLC, part of Springer Nature.
PY - 2021/6
Y1 - 2021/6
N2 - Thermoelectric devices are environmentally friendly renewable energy sources that use waste heat to generate electricity. So far, p-type Bi–Sb–Te-based alloys with high thermoelectric properties were fabricated using low-dimensional and single growth methods as small-scale, laboratory-grown samples. However, large-scale fabrication processes are required for commercial applications of thermoelectric devices. In this work, large amounts (2–3 kg) of p-type 20%Bi2Te3–80%Sb2Te3 alloy powders were fabricated using the gas atomization (GA) process under an inert gas atmosphere. Subsequently, a large-scale sample, 64 mm thick and 25 mm in diameter, was consolidated from the as-fabricated GA powders using spark plasma sintering at 673 K. The homogeneity of the microstructure, density, thermoelectric properties, and mechanical properties of the high-thickness sintered bulk were systematically investigated at various positions. The EBSD texture analysis revealed that an almost similar microstructure existed in all positions of the bulk sample, which was comprised of a mixture of coarse grains and fine grains randomly distributed throughout the matrix. The peak electrical conductivity of 1100 Ω−1 cm−1 was obtained from the top position of the thick sample, which had a relatively higher carrier mobility. The maximum power factor of 3.96 mW/mK2 was achieved by the top part of the specimen, because of its higher electrical conductivity. The lowest thermal conductivity of 0.964 W/mK at 350 K was obtained from the bottom part of the specimen. As a result, the maximum figure of merit, ZT of 1.25 was achieved in the bottom position of the high-thickness sample. Homogeneous (within 5% of variation) thermoelectric transport properties were observed throughout the fabricated high-thickness sintered sample, regardless of position.
AB - Thermoelectric devices are environmentally friendly renewable energy sources that use waste heat to generate electricity. So far, p-type Bi–Sb–Te-based alloys with high thermoelectric properties were fabricated using low-dimensional and single growth methods as small-scale, laboratory-grown samples. However, large-scale fabrication processes are required for commercial applications of thermoelectric devices. In this work, large amounts (2–3 kg) of p-type 20%Bi2Te3–80%Sb2Te3 alloy powders were fabricated using the gas atomization (GA) process under an inert gas atmosphere. Subsequently, a large-scale sample, 64 mm thick and 25 mm in diameter, was consolidated from the as-fabricated GA powders using spark plasma sintering at 673 K. The homogeneity of the microstructure, density, thermoelectric properties, and mechanical properties of the high-thickness sintered bulk were systematically investigated at various positions. The EBSD texture analysis revealed that an almost similar microstructure existed in all positions of the bulk sample, which was comprised of a mixture of coarse grains and fine grains randomly distributed throughout the matrix. The peak electrical conductivity of 1100 Ω−1 cm−1 was obtained from the top position of the thick sample, which had a relatively higher carrier mobility. The maximum power factor of 3.96 mW/mK2 was achieved by the top part of the specimen, because of its higher electrical conductivity. The lowest thermal conductivity of 0.964 W/mK at 350 K was obtained from the bottom part of the specimen. As a result, the maximum figure of merit, ZT of 1.25 was achieved in the bottom position of the high-thickness sample. Homogeneous (within 5% of variation) thermoelectric transport properties were observed throughout the fabricated high-thickness sintered sample, regardless of position.
UR - http://www.scopus.com/inward/record.url?scp=85106981625&partnerID=8YFLogxK
U2 - 10.1007/s10854-021-06178-w
DO - 10.1007/s10854-021-06178-w
M3 - Article
AN - SCOPUS:85106981625
SN - 0957-4522
VL - 32
SP - 16302
EP - 16310
JO - Journal of Materials Science: Materials in Electronics
JF - Journal of Materials Science: Materials in Electronics
IS - 12
ER -