Investigation of crystallization behavior of CIG-Se bi-layer thin films

Copper indium gallium diselenide (CIGSe) thin film was fabricated via a thermal treatment of CIG-Se bi-layer thin films. A CIG layer was prepared first, by a chemical solution deposition (CSD) process. The Se layer was deposited separately on the CIG layer by evaporation. The CIG-Se bi-layer then underwent a thermal treatment to cause a reaction between the two layers. In order to investigate the mechanism of CIG-Se bi-layer crystallization, the thermal treatment temperature was varied. The properties of the prepared CIGSe ₂ thin films were analyzed using X-ray diffraction (XRD), scanning electron microscope (SEM), energy dispersive spectrometry (EDS), and UV-visible spectrophotometry.