Abstract
In recent years, resistance changes random access memory (RRAM) which shows reversible bistable resistance states by applied voltage has been studied as one of the alternatives of next-generation nonvolatile memory due to its excellent device characteristics including scalability, speed, and retention. Here, we report on the noncharge-based NiO RRAM device characteristics with load resistor as well as the simulation results of controlled conducting filament configuration. The RRAM device with load resistor showed super performances including highly reduction of switching current (1 order) and significantly improved switching voltage distribution (30 reduction).
| Original language | English |
|---|---|
| Article number | 6279486 |
| Pages (from-to) | 1122-1125 |
| Number of pages | 4 |
| Journal | IEEE Transactions on Nanotechnology |
| Volume | 11 |
| Issue number | 6 |
| DOIs | |
| State | Published - 2012 |
Bibliographical note
Funding Information:Manuscript received February 8, 2012; revised July 9, 2012; accepted August 16, 2012. Date of publication August 22, 2012; date of current version November 16, 2012. The work of B. S. Kang was supported by the grant from the National Research Foundation of Korea funded by the Korean Ministry of Education, Science, and Technology under Grant. 2012-0001684. The review of this paper was arranged by Associate Editor Y.-H. Cho.
Keywords
- Nickel oxide
- nonvolatile memory
- resistance switching