Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Jaewook Jeong; Joonwoo Kim; Gwang Jun Lee; Byeong Dae Choi

doi:10.1063/1.3675876

Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

Jaewook Jeong, Joonwoo Kim, Gwang Jun Lee, Byeong Dae Choi

Division of Electronics & Information System

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ _FEi) and parasitic resistance in source (R _s) and drain (R _d) electrodes was performed especially for low V _GS and V _DS conditions. The resulting μ _FEi showed typical V _GS dependency of amorphous semiconductor TFTs. However, R _s and R _d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.

Original language	English
Article number	023506
Journal	Applied Physics Letters
Volume	100
Issue number	2
DOIs	https://doi.org/10.1063/1.3675876
State	Published - 9 Jan 2012

Bibliographical note

Funding Information:
This work was supported by the basic research program (11-NB-02) of the Daegu Gyeongbuk Institute of Science and Technology (DGIST) funded by the Ministry of Education, Science and Technology (MEST) of Korea.

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title = "Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method",

abstract = "We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.",

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AU - Choi, Byeong Dae

N1 - Funding Information: This work was supported by the basic research program (11-NB-02) of the Daegu Gyeongbuk Institute of Science and Technology (DGIST) funded by the Ministry of Education, Science and Technology (MEST) of Korea.

PY - 2012/1/9

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N2 - We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.

AB - We analyzed the intrinsic electrical characteristics of amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) using a gated-four-probe method. Based on the back channel potential, the extraction of intrinsic field-effect mobility (μ FEi) and parasitic resistance in source (R s) and drain (R d) electrodes was performed especially for low V GS and V DS conditions. The resulting μ FEi showed typical V GS dependency of amorphous semiconductor TFTs. However, R s and R d showed that there can be non-uniformity in source/drain parasitic resistance, which indicates that a separate analysis of the parameters of each electrode is essential for further improvement of the performance of a-IGZO TFTs.

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Intrinsic parameter extraction of a-InGaZnO thin-film transistors by a gated-four-probe method

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