TY - JOUR
T1 - Interfacial reaction of Co on Si(100) by using medium-energy ion-scattering spectroscopy and X-ray photoelectron spectroscopy
AU - Nam, June
AU - Hwang, Iea Young
AU - Kim, Jong Ho
AU - Kang, Hee Jae
AU - Ha, Yong Ho
AU - Moon, Dae Won
AU - O'Connor, Daryl John
AU - Macdonald, Ronald James
PY - 1999
Y1 - 1999
N2 - The interfacial reaction of Co on Si(100) was studied using MEIS (medium energy ion scattering spectroscopy) and XPS (X-ray photoelectron spectroscopy). For thin Co overlayers (6∼8 ML) on Si(100), the MEIS data indicated that Co 2Si phase was formed at room temperature (RT), which was strongly supported by the XPS chemical shift of the Co3p core level peak. We observed the formation of the CoSi phase after annealing at 350°C, which was followed by the formation of CoSi 2 at an annealing temperature of 450°C. For thick Co overlayers (21∼30 ML), at an annealing temperature of 350°C, the Co, Co 2Si, and CoSi phases coexist, but changed rapidly to the CoSi phase, which was the stable phase at annealing temperatures between 350°C and 450°C. Further annealing to 550°C caused the formation of CoSi 2 phase. For all coverages, we observed that the formation of CoSi 2 took place only after annealing. The annealing temperature for the CoSi 2 phase depended on the thickness of the Co overlayer.
AB - The interfacial reaction of Co on Si(100) was studied using MEIS (medium energy ion scattering spectroscopy) and XPS (X-ray photoelectron spectroscopy). For thin Co overlayers (6∼8 ML) on Si(100), the MEIS data indicated that Co 2Si phase was formed at room temperature (RT), which was strongly supported by the XPS chemical shift of the Co3p core level peak. We observed the formation of the CoSi phase after annealing at 350°C, which was followed by the formation of CoSi 2 at an annealing temperature of 450°C. For thick Co overlayers (21∼30 ML), at an annealing temperature of 350°C, the Co, Co 2Si, and CoSi phases coexist, but changed rapidly to the CoSi phase, which was the stable phase at annealing temperatures between 350°C and 450°C. Further annealing to 550°C caused the formation of CoSi 2 phase. For all coverages, we observed that the formation of CoSi 2 took place only after annealing. The annealing temperature for the CoSi 2 phase depended on the thickness of the Co overlayer.
UR - http://www.scopus.com/inward/record.url?scp=0033408052&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0033408052
SN - 0374-4884
VL - 35
SP - S546-S549
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
IS - SUPPL. 2
ER -