Interfacial reaction of Co on Si(100) by using medium-energy ion-scattering spectroscopy and X-ray photoelectron spectroscopy

June Nam, Iea Young Hwang, Jong Ho Kim, Hee Jae Kang, Yong Ho Ha, Dae Won Moon, Daryl John O'Connor, Ronald James Macdonald

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2 Scopus citations

Abstract

The interfacial reaction of Co on Si(100) was studied using MEIS (medium energy ion scattering spectroscopy) and XPS (X-ray photoelectron spectroscopy). For thin Co overlayers (6∼8 ML) on Si(100), the MEIS data indicated that Co 2Si phase was formed at room temperature (RT), which was strongly supported by the XPS chemical shift of the Co3p core level peak. We observed the formation of the CoSi phase after annealing at 350°C, which was followed by the formation of CoSi 2 at an annealing temperature of 450°C. For thick Co overlayers (21∼30 ML), at an annealing temperature of 350°C, the Co, Co 2Si, and CoSi phases coexist, but changed rapidly to the CoSi phase, which was the stable phase at annealing temperatures between 350°C and 450°C. Further annealing to 550°C caused the formation of CoSi 2 phase. For all coverages, we observed that the formation of CoSi 2 took place only after annealing. The annealing temperature for the CoSi 2 phase depended on the thickness of the Co overlayer.

Original languageEnglish
Pages (from-to)S546-S549
JournalJournal of the Korean Physical Society
Volume35
Issue numberSUPPL. 2
StatePublished - 1999

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