Interfacial properties of ion beam mixed Cu/SiO2 system

K. S. Kim; I. S. Choi; Y. S. Lee; Y. W. Kim; S. S. Kim; H. K. Kim; D. W. Moon; C. N. Whang

doi:10.1016/0168-583X(93)90786-6

Interfacial properties of ion beam mixed Cu/SiO₂ system

K. S. Kim, I. S. Choi, Y. S. Lee, Y. W. Kim, S. S. Kim, H. K. Kim, D. W. Moon, C. N. Whang

Department of New Biology

Yonsei University

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

A thin Cu layer (35 nm) deposited on SiO₂ has been mixed with 80 keV Ar⁺ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated with Rutherford backscattering spectroscopy, grazing angle X-ray diffraction and scratch test. Adhesion of Cu films was improved by a factor of 3 at a dose of 1.5 × 10¹⁶ Ar⁴/cm² in the case of ion beam mixing at room temperature, while the high temperature ion beam mixing enhanced the adhesion by a factor of 5. The ballistic mixing effects on the improvement of adhesion for the room temperature ion mixing and the creation of Cu₂O phase at the interface, which contributes to the enhancement of adhesion induced by ion beam mixing at high temperature, are described in the present paper.

Original language	English
Pages (from-to)	1300-1303
Number of pages	4
Journal	Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume	80-81
Issue number	PART 2
DOIs	https://doi.org/10.1016/0168-583X(93)90786-6
State	Published - 1993

Bibliographical note

Funding Information:
This stu.1v was supported in part by the Korea Science and Ecginc~r :ng Fr undati ;gin and, ti;c ~~.:nistty of Science and Technology .

Access to Document

10.1016/0168-583X(93)90786-6

Cite this

@article{3f8be4cf08cd4caa82a23b6922d69e7d,

title = "Interfacial properties of ion beam mixed Cu/SiO2 system",

abstract = "A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated with Rutherford backscattering spectroscopy, grazing angle X-ray diffraction and scratch test. Adhesion of Cu films was improved by a factor of 3 at a dose of 1.5 × 1016 Ar4/cm2 in the case of ion beam mixing at room temperature, while the high temperature ion beam mixing enhanced the adhesion by a factor of 5. The ballistic mixing effects on the improvement of adhesion for the room temperature ion mixing and the creation of Cu2O phase at the interface, which contributes to the enhancement of adhesion induced by ion beam mixing at high temperature, are described in the present paper.",

author = "Kim, {K. S.} and Choi, {I. S.} and Lee, {Y. S.} and Kim, {Y. W.} and Kim, {S. S.} and Kim, {H. K.} and Moon, {D. W.} and Whang, {C. N.}",

note = "Funding Information: This stu.1v was supported in part by the Korea Science and Ecginc~r :ng Fr undati ;gin and, ti;c ~~.:nistty of Science and Technology .",

year = "1993",

doi = "10.1016/0168-583X(93)90786-6",

language = "English",

volume = "80-81",

pages = "1300--1303",

journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "PART 2",

}

TY - JOUR

T1 - Interfacial properties of ion beam mixed Cu/SiO2 system

AU - Kim, K. S.

AU - Choi, I. S.

AU - Lee, Y. S.

AU - Kim, Y. W.

AU - Kim, S. S.

AU - Kim, H. K.

AU - Moon, D. W.

AU - Whang, C. N.

N1 - Funding Information: This stu.1v was supported in part by the Korea Science and Ecginc~r :ng Fr undati ;gin and, ti;c ~~.:nistty of Science and Technology .

PY - 1993

Y1 - 1993

N2 - A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated with Rutherford backscattering spectroscopy, grazing angle X-ray diffraction and scratch test. Adhesion of Cu films was improved by a factor of 3 at a dose of 1.5 × 1016 Ar4/cm2 in the case of ion beam mixing at room temperature, while the high temperature ion beam mixing enhanced the adhesion by a factor of 5. The ballistic mixing effects on the improvement of adhesion for the room temperature ion mixing and the creation of Cu2O phase at the interface, which contributes to the enhancement of adhesion induced by ion beam mixing at high temperature, are described in the present paper.

AB - A thin Cu layer (35 nm) deposited on SiO2 has been mixed with 80 keV Ar+ at room temperature, 550 and 650 K. Interfacial properties of irradiated samples were investigated with Rutherford backscattering spectroscopy, grazing angle X-ray diffraction and scratch test. Adhesion of Cu films was improved by a factor of 3 at a dose of 1.5 × 1016 Ar4/cm2 in the case of ion beam mixing at room temperature, while the high temperature ion beam mixing enhanced the adhesion by a factor of 5. The ballistic mixing effects on the improvement of adhesion for the room temperature ion mixing and the creation of Cu2O phase at the interface, which contributes to the enhancement of adhesion induced by ion beam mixing at high temperature, are described in the present paper.

UR - http://www.scopus.com/inward/record.url?scp=0011153986&partnerID=8YFLogxK

U2 - 10.1016/0168-583X(93)90786-6

DO - 10.1016/0168-583X(93)90786-6

M3 - Article

AN - SCOPUS:0011153986

SN - 0168-583X

VL - 80-81

SP - 1300

EP - 1303

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

IS - PART 2

ER -

Interfacial properties of ion beam mixed Cu/SiO₂ system

Abstract

Bibliographical note

Access to Document

Other files and links

Fingerprint

Cite this