Interface sulfur passivation using H                         2                         S annealing for atomic-layer-deposited Al                         2                         O                         3                          films on an ultrathin-body In                         0.53                         Ga                         0.47                         As-on-insulator

Hyun Soo Jin; Young Jin Cho; Sang Moon Lee; Dae Hyun Kim; Dae Woong Kim; Dongsoo Lee; Jong Bong Park; Jeong Yeon Won; Myoung Jae Lee; Seong Ho Cho; Cheol Seong Hwang; Tae Joo Park

doi:10.1016/j.apsusc.2014.07.123

Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator

Hyun Soo Jin, Young Jin Cho, Sang Moon Lee, Dae Hyun Kim, Dae Woong Kim, Dongsoo Lee, Jong Bong Park, Jeong Yeon Won, Myoung Jae Lee, Seong Ho Cho, Cheol Seong Hwang, Tae Joo Park

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

15 Scopus citations

Abstract

Atomic-layer-deposited Al ₂ O ₃ films were grown on ultrathin-body In _0.53 Ga _0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH ₄ ) ₂ S) solution, and dry processing using post-deposition annealing (PDA) under a H ₂ S atmosphere. The PDA under the H ₂ S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH ₄ ) ₂ S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH ₄ ) ₂ S wet-treatment than the PDA under a H ₂ S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H ₂ S atmosphere following (NH ₄ ) ₂ S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.

Original language	English
Pages (from-to)	178-183
Number of pages	6
Journal	Applied Surface Science
Volume	315
Issue number	1
DOIs	https://doi.org/10.1016/j.apsusc.2014.07.123
State	Published - 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier B.V. All rights reserved.

Keywords

ALD
H S
III-V
MOSFETs
Sulfur passivation

Access to Document

10.1016/j.apsusc.2014.07.123

Cite this

Jin, H. S., Cho, Y. J., Lee, S. M., Kim, D. H., Kim, D. W., Lee, D., Park, J. B., Won, J. Y., Lee, M. J., Cho, S. H., Hwang, C. S., & Park, T. J. (2014). Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator Applied Surface Science, 315(1), 178-183. https://doi.org/10.1016/j.apsusc.2014.07.123

Jin, Hyun Soo ; Cho, Young Jin ; Lee, Sang Moon et al. / Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator In: Applied Surface Science. 2014 ; Vol. 315, No. 1. pp. 178-183.

@article{168bf589cbdc4619ac7e9acfc8ddd4ce,

title = " Interface sulfur passivation using H 2 S annealing for atomic-layer-deposited Al 2 O 3 films on an ultrathin-body In 0.53 Ga 0.47 As-on-insulator ",

abstract = " Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.",

keywords = "ALD, H S, III-V, MOSFETs, Sulfur passivation",

author = "Jin, \{Hyun Soo\} and Cho, \{Young Jin\} and Lee, \{Sang Moon\} and Kim, \{Dae Hyun\} and Kim, \{Dae Woong\} and Dongsoo Lee and Park, \{Jong Bong\} and Won, \{Jeong Yeon\} and Lee, \{Myoung Jae\} and Cho, \{Seong Ho\} and Hwang, \{Cheol Seong\} and Park, \{Tae Joo\}",

year = "2014",

doi = "10.1016/j.apsusc.2014.07.123",

language = "English",

volume = "315",

pages = "178--183",

journal = "Applied Surface Science",

issn = "0169-4332",

publisher = "Elsevier B.V.",

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}

Jin, HS, Cho, YJ, Lee, SM, Kim, DH, Kim, DW, Lee, D, Park, JB, Won, JY, Lee, MJ, Cho, SH, Hwang, CS & Park, TJ 2014, ' Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator ', Applied Surface Science, vol. 315, no. 1, pp. 178-183. https://doi.org/10.1016/j.apsusc.2014.07.123

Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator . / Jin, Hyun Soo; Cho, Young Jin; Lee, Sang Moon et al.
In: Applied Surface Science, Vol. 315, No. 1, 2014, p. 178-183.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Interface sulfur passivation using H 2 S annealing for atomic-layer-deposited Al 2 O 3 films on an ultrathin-body In 0.53 Ga 0.47 As-on-insulator

AU - Jin, Hyun Soo

AU - Cho, Young Jin

AU - Lee, Sang Moon

AU - Kim, Dae Hyun

AU - Kim, Dae Woong

AU - Lee, Dongsoo

AU - Park, Jong Bong

AU - Won, Jeong Yeon

AU - Lee, Myoung Jae

AU - Cho, Seong Ho

AU - Hwang, Cheol Seong

AU - Park, Tae Joo

PY - 2014

Y1 - 2014

N2 - Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.

AB - Atomic-layer-deposited Al 2 O 3 films were grown on ultrathin-body In 0.53 Ga 0.47 As substrates for III-V compound-semiconductor-based devices. Interface sulfur (S) passivation was performed with wet processing using ammonium sulfide ((NH 4 ) 2 S) solution, and dry processing using post-deposition annealing (PDA) under a H 2 S atmosphere. The PDA under the H 2 S atmosphere resulted in a lower S concentration at the interface and a thicker interfacial layer than the case with (NH 4 ) 2 S wet-treatment. The electrical properties of the device, including the interface property estimated through frequency dispersion in capacitance, were better for (NH 4 ) 2 S wet-treatment than the PDA under a H 2 S atmosphere. They might be improved, however, by optimizing the process conditions of PDA. The PDA under a H 2 S atmosphere following (NH 4 ) 2 S wet-treatment resulted in an increased S concentration at the interface, which improved the electrical properties of the devices.

KW - ALD

KW - H S

KW - III-V

KW - MOSFETs

KW - Sulfur passivation

UR - https://www.scopus.com/pages/publications/84922830937

U2 - 10.1016/j.apsusc.2014.07.123

DO - 10.1016/j.apsusc.2014.07.123

M3 - Article

AN - SCOPUS:84922830937

SN - 0169-4332

VL - 315

SP - 178

EP - 183

JO - Applied Surface Science

JF - Applied Surface Science

IS - 1

ER -

Jin HS, Cho YJ, Lee SM, Kim DH, Kim DW, Lee D et al. Interface sulfur passivation using H ₂ S annealing for atomic-layer-deposited Al ₂ O ₃ films on an ultrathin-body In _0.53 Ga _0.47 As-on-insulator Applied Surface Science. 2014;315(1):178-183. doi: 10.1016/j.apsusc.2014.07.123