Interface strain profiling in ultrathin SiO                         2                          gate oxides with medium energy ion scattering spectroscopy

D. W. Moon; H. I. Lee

doi:10.1016/S1567-1739(02)00234-1

Interface strain profiling in ultrathin SiO ₂ gate oxides with medium energy ion scattering spectroscopy

D. W. Moon, H. I. Lee

Department of New Biology

Korea Research Institute of Standards and Science

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

Medium energy ion scattering spectroscopy (MEIS) could ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO ₂ /Si(0 0 1) interfaces.

Original language	English
Pages (from-to)	45-49
Number of pages	5
Journal	Current Applied Physics
Volume	3
Issue number	1
DOIs	https://doi.org/10.1016/S1567-1739(02)00234-1
State	Published - Feb 2003

Bibliographical note

Funding Information:
This work was supported by KOSEF through ASSRC at Yonsei University and MOST, Korea through National Research Laboratory Program.

Keywords

Interface strain
Medium energy ion scattering spectroscopy
Strain profiling
Ultrathin gate oxide

Access to Document

10.1016/S1567-1739(02)00234-1

Cite this

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title = " Interface strain profiling in ultrathin SiO 2 gate oxides with medium energy ion scattering spectroscopy ",

abstract = " Medium energy ion scattering spectroscopy (MEIS) could ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO 2 /Si(0 0 1) interfaces.",

keywords = "Interface strain, Medium energy ion scattering spectroscopy, Strain profiling, Ultrathin gate oxide",

author = "Moon, \{D. W.\} and Lee, \{H. I.\}",

note = "Funding Information: This work was supported by KOSEF through ASSRC at Yonsei University and MOST, Korea through National Research Laboratory Program.",

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AU - Moon, D. W.

AU - Lee, H. I.

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PY - 2003/2

Y1 - 2003/2

N2 - Medium energy ion scattering spectroscopy (MEIS) could ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO 2 /Si(0 0 1) interfaces.

AB - Medium energy ion scattering spectroscopy (MEIS) could ∼1 nm interface layer with compressive strain, which depends sensitively on the interface treatment conditions such as oxynitridation, ozone oxidation, tilt of Si(0 0 1) substrates. The interface strain relaxation always shows improvements in gate oxide reliability. Atomic scale investigations of strain profiles with MEIS are reviewed for SiO 2 /Si(0 0 1) interfaces.

KW - Interface strain

KW - Medium energy ion scattering spectroscopy

KW - Strain profiling

KW - Ultrathin gate oxide

UR - https://www.scopus.com/pages/publications/0037321034

U2 - 10.1016/S1567-1739(02)00234-1

DO - 10.1016/S1567-1739(02)00234-1

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