Initial nucleation and growth of atomic layer deposited Hf O2 gate dielectric layers on Si surfaces with the various surface conditions using in situ medium energy ion scattering analysis
- K. B. Chung
- , C. N. Whang
- , H. S. Chang
- , D. W. Moon
- , M. H. Cho
Research output: Contribution to journal › Article › peer-review
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