@inproceedings{9164717e3053425b80c84c447419f8ba,
title = "Influences of charged dislocations on performance of III-V compound semiconductor FinFETs",
abstract = "We present a model for charged dislocations effects on III-V compound semiconductor based FinFETs performance. The model is developed to obtain momentum relaxation time and, from it, key device performance parameters such as effective mobility, threshold voltage, and finally saturation drain current. We find out that the charged threading edge dislocation density of a FinFET channel should be smaller than about 107 cm-2 to ignore the dislocation scattering impact on the device performance. This value is roughly one order of magnitude stricter than the previously known condition for wurtzite GaN.",
keywords = "Dislocation, FinFET, III-V semiconductors, MOSFET, Scattering",
author = "Hur, {Ji Hyun} and Lee, {Myoung Jae} and Cho, {Seong Ho} and Park, {Young Soo}",
year = "2014",
doi = "10.4028/www.scientific.net/SSP.205-206.429",
language = "English",
isbn = "9783037858240",
series = "Solid State Phenomena",
publisher = "Trans Tech Publications Ltd",
pages = "429--434",
booktitle = "Gettering and Defect Engineering in Semiconductor Technology XV",
note = "15th Gettering and Defect Engineering in Semiconductor Technology, GADEST 2013 ; Conference date: 22-09-2013 Through 27-09-2013",
}