Influence of electronic structure of CeSbNi0.15 on its optical conductivity

  • S. O. Hong
  • , B. H. Min
  • , H. J. Lee
  • , S. Kimura
  • , M. H. Jung
  • , T. Takabatake
  • , Y. S. Kwon

Research output: Contribution to journalConference articlepeer-review

Abstract

The reflectivity of CeSbNi0.15 is measured at several temperatures in the low energy regions. The optical conductivity is obtained from the measured reflectivity. The carrier concentration and the relaxation time are evaluated by the Drude model. It is found that the p-f mixing collapse takes place in CeSbNi0.15 and that the gap formation occurs at 7 K.

Original languageEnglish
Pages (from-to)251-252
Number of pages2
JournalPhysica B: Condensed Matter
Volume312-313
DOIs
StatePublished - Mar 2002
EventInternational Conference on Strongly Correlated Electrons - Ann Arbor, MI, United States
Duration: 6 Aug 20026 Aug 2002

Bibliographical note

Funding Information:
This work is supported by the Korean Science and Engineering Foundation (KOSEF) through the Center for Strongly Correlated Materials Research (CSCMR) (2001) and by the Brain Korea 21 Project in 2001.

Keywords

  • CeSbNi
  • Optical conductivity
  • p-f mixing suppression

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