Influence of Channel Hole Remaining Ratio on Hemi-Cylindrical Vertical NAND Flash Memory

Jin Ho Chang; Ji Ho Uhm; Hyug Su Kwon; Eunmee Kwon; Woo Young Choi

doi:10.1109/LED.2022.3192545

Influence of Channel Hole Remaining Ratio on Hemi-Cylindrical Vertical NAND Flash Memory

Jin Ho Chang, Ji Ho Uhm, Hyug Su Kwon, Eunmee Kwon, Woo Young Choi

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

The influence of the channel hole remaining ratio (CHRR) on the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory was investigated using both simulation and experimental data. Although HC VNAND flash memory is advantageous for increasing lateral memory density, it suffers from nonuniform carrier injection and low program/erase efficiency. In this study, the underlying physics of these disadvantages are discussed in terms of the proposed parameter, CHRR. Finally, based on the analysis, a recessed channel HC VNAND flash memory cell is proposed.

Original language	English
Pages (from-to)	1432-1435
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	43
Issue number	9
DOIs	https://doi.org/10.1109/LED.2022.3192545
State	Published - 1 Sep 2022

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

Hemi-cylindrical vertical NAND (HC VNAND)
channel hole remaining ratio
recessed channel structure

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10.1109/LED.2022.3192545

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title = "Influence of Channel Hole Remaining Ratio on Hemi-Cylindrical Vertical NAND Flash Memory",

abstract = "The influence of the channel hole remaining ratio (CHRR) on the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory was investigated using both simulation and experimental data. Although HC VNAND flash memory is advantageous for increasing lateral memory density, it suffers from nonuniform carrier injection and low program/erase efficiency. In this study, the underlying physics of these disadvantages are discussed in terms of the proposed parameter, CHRR. Finally, based on the analysis, a recessed channel HC VNAND flash memory cell is proposed.",

keywords = "Hemi-cylindrical vertical NAND (HC VNAND), channel hole remaining ratio, recessed channel structure",

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AU - Choi, Woo Young

PY - 2022/9/1

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AB - The influence of the channel hole remaining ratio (CHRR) on the hemi-cylindrical (HC) vertical NAND (VNAND) flash memory was investigated using both simulation and experimental data. Although HC VNAND flash memory is advantageous for increasing lateral memory density, it suffers from nonuniform carrier injection and low program/erase efficiency. In this study, the underlying physics of these disadvantages are discussed in terms of the proposed parameter, CHRR. Finally, based on the analysis, a recessed channel HC VNAND flash memory cell is proposed.

KW - Hemi-cylindrical vertical NAND (HC VNAND)

KW - channel hole remaining ratio

KW - recessed channel structure

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JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

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ER -

Influence of Channel Hole Remaining Ratio on Hemi-Cylindrical Vertical NAND Flash Memory

Abstract

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Keywords

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