Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application

Firoz Khan; Seong Ho Baek; S. N. Singh; P. K. Singh; M. Husain; Jae Hyun Kim

doi:10.1016/j.solener.2014.08.035

Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application

Firoz Khan, Seong Ho Baek, S. N. Singh, P. K. Singh, M. Husain, Jae Hyun Kim

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

14 Scopus citations

Abstract

A systematic study of hydrogen sintered aluminum rich zinc oxide (AZO) films is made from the view point of their application as surface passivation layer for silicon solar cell. AZO films of various Al and Zn molar concentration ratios (0<R_Al/Zn<40%) are made and their electrical and optical properties are studied. The lowest surface recombination velocity (~10cm/s) is realized in the film with R_Al/Zn≈30% as inferred from minority carrier lifetime measurements. The passivation effect of AZO layer may be attributed to presence of hydrogen whose concentration is maximum (~3.93×10²²atoms/cm³) for R_Al/Zn≈30%. Effect of surface passivation is manifested in the efficiency of solar cell where an improvement>4% vis-à-vis the control cell (without AZO layer) is seen after AZO layer is applied on the rear surface of the cell.

Original language	English
Pages (from-to)	595-602
Number of pages	8
Journal	Solar Energy
Volume	110
DOIs	https://doi.org/10.1016/j.solener.2014.08.035
State	Published - 1 Dec 2014

Bibliographical note

Publisher Copyright:
© 2014 Elsevier Ltd.

Keywords

Al rich zinc oxide
Passivating layers
Silicon solar cells
Surface recombination velocity

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1016/j.solener.2014.08.035

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title = "Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application",

abstract = "A systematic study of hydrogen sintered aluminum rich zinc oxide (AZO) films is made from the view point of their application as surface passivation layer for silicon solar cell. AZO films of various Al and Zn molar concentration ratios (0Al/Zn<40%) are made and their electrical and optical properties are studied. The lowest surface recombination velocity (~10cm/s) is realized in the film with RAl/Zn≈30% as inferred from minority carrier lifetime measurements. The passivation effect of AZO layer may be attributed to presence of hydrogen whose concentration is maximum (~3.93×1022atoms/cm3) for RAl/Zn≈30%. Effect of surface passivation is manifested in the efficiency of solar cell where an improvement>4% vis-{\`a}-vis the control cell (without AZO layer) is seen after AZO layer is applied on the rear surface of the cell.",

keywords = "Al rich zinc oxide, Passivating layers, Silicon solar cells, Surface recombination velocity",

author = "Firoz Khan and Baek, {Seong Ho} and Singh, {S. N.} and Singh, {P. K.} and M. Husain and Kim, {Jae Hyun}",

note = "Publisher Copyright: {\textcopyright} 2014 Elsevier Ltd.",

year = "2014",

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doi = "10.1016/j.solener.2014.08.035",

language = "English",

volume = "110",

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journal = "Solar Energy",

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T1 - Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application

AU - Khan, Firoz

AU - Baek, Seong Ho

AU - Singh, S. N.

AU - Singh, P. K.

AU - Husain, M.

AU - Kim, Jae Hyun

PY - 2014/12/1

Y1 - 2014/12/1

N2 - A systematic study of hydrogen sintered aluminum rich zinc oxide (AZO) films is made from the view point of their application as surface passivation layer for silicon solar cell. AZO films of various Al and Zn molar concentration ratios (0Al/Zn<40%) are made and their electrical and optical properties are studied. The lowest surface recombination velocity (~10cm/s) is realized in the film with RAl/Zn≈30% as inferred from minority carrier lifetime measurements. The passivation effect of AZO layer may be attributed to presence of hydrogen whose concentration is maximum (~3.93×1022atoms/cm3) for RAl/Zn≈30%. Effect of surface passivation is manifested in the efficiency of solar cell where an improvement>4% vis-à-vis the control cell (without AZO layer) is seen after AZO layer is applied on the rear surface of the cell.

AB - A systematic study of hydrogen sintered aluminum rich zinc oxide (AZO) films is made from the view point of their application as surface passivation layer for silicon solar cell. AZO films of various Al and Zn molar concentration ratios (0Al/Zn<40%) are made and their electrical and optical properties are studied. The lowest surface recombination velocity (~10cm/s) is realized in the film with RAl/Zn≈30% as inferred from minority carrier lifetime measurements. The passivation effect of AZO layer may be attributed to presence of hydrogen whose concentration is maximum (~3.93×1022atoms/cm3) for RAl/Zn≈30%. Effect of surface passivation is manifested in the efficiency of solar cell where an improvement>4% vis-à-vis the control cell (without AZO layer) is seen after AZO layer is applied on the rear surface of the cell.

KW - Al rich zinc oxide

KW - Passivating layers

KW - Silicon solar cells

KW - Surface recombination velocity

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U2 - 10.1016/j.solener.2014.08.035

DO - 10.1016/j.solener.2014.08.035

M3 - Article

AN - SCOPUS:84910622045

SN - 0038-092X

VL - 110

SP - 595

EP - 602

JO - Solar Energy

JF - Solar Energy

ER -

Influence of Al content on surface passivation properties of Al rich ZnO films for solar cell application

Abstract

Bibliographical note

Keywords

UN SDGs

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