Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography

Tae Sun Kim; Sang Mook Kim; Yun Hee Jang; Gun Young Jung

doi:10.1063/1.2802557

Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography

Tae Sun Kim, Sang Mook Kim, Yun Hee Jang, Gun Young Jung

Department of Energy and Science and Engineering

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

83 Scopus citations

Abstract

The light extraction efficiency of light emitting diodes (LEDs) was enhanced by incorporating nanoscale patterns inside the LED structure. A hole patterned p-GaN layer and a pillar patterned indium-tin-oxide (ITO) contact layer were fabricated by using colloidal lithography with size-tunable polystyrene spheres. It was found that the light output power (at 20 mA) of the LEDs with the hole patterned p-GaN layer and the pillar patterned ITO contact layer were enhanced by 21% and 10%, respectively, compared with the conventional LED due to the increase of the extraction probability of the internally reflected photons through the patterns.

Original language	English
Article number	171114
Journal	Applied Physics Letters
Volume	91
Issue number	17
DOIs	https://doi.org/10.1063/1.2802557
State	Published - 2007

Bibliographical note

Funding Information:
This work was supported by the second stage of the Brain Korea 21 Project in 2007 and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (M1064408000306N440800310).

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title = "Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography",

abstract = "The light extraction efficiency of light emitting diodes (LEDs) was enhanced by incorporating nanoscale patterns inside the LED structure. A hole patterned p-GaN layer and a pillar patterned indium-tin-oxide (ITO) contact layer were fabricated by using colloidal lithography with size-tunable polystyrene spheres. It was found that the light output power (at 20 mA) of the LEDs with the hole patterned p-GaN layer and the pillar patterned ITO contact layer were enhanced by 21\% and 10\%, respectively, compared with the conventional LED due to the increase of the extraction probability of the internally reflected photons through the patterns.",

author = "Kim, \{Tae Sun\} and Kim, \{Sang Mook\} and Jang, \{Yun Hee\} and Jung, \{Gun Young\}",

note = "Funding Information: This work was supported by the second stage of the Brain Korea 21 Project in 2007 and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (M1064408000306N440800310).",

year = "2007",

doi = "10.1063/1.2802557",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography

AU - Kim, Tae Sun

AU - Kim, Sang Mook

AU - Jang, Yun Hee

AU - Jung, Gun Young

N1 - Funding Information: This work was supported by the second stage of the Brain Korea 21 Project in 2007 and the Korea Science and Engineering Foundation (KOSEF) grant funded by the Korea government (MOST) (M1064408000306N440800310).

PY - 2007

Y1 - 2007

N2 - The light extraction efficiency of light emitting diodes (LEDs) was enhanced by incorporating nanoscale patterns inside the LED structure. A hole patterned p-GaN layer and a pillar patterned indium-tin-oxide (ITO) contact layer were fabricated by using colloidal lithography with size-tunable polystyrene spheres. It was found that the light output power (at 20 mA) of the LEDs with the hole patterned p-GaN layer and the pillar patterned ITO contact layer were enhanced by 21% and 10%, respectively, compared with the conventional LED due to the increase of the extraction probability of the internally reflected photons through the patterns.

AB - The light extraction efficiency of light emitting diodes (LEDs) was enhanced by incorporating nanoscale patterns inside the LED structure. A hole patterned p-GaN layer and a pillar patterned indium-tin-oxide (ITO) contact layer were fabricated by using colloidal lithography with size-tunable polystyrene spheres. It was found that the light output power (at 20 mA) of the LEDs with the hole patterned p-GaN layer and the pillar patterned ITO contact layer were enhanced by 21% and 10%, respectively, compared with the conventional LED due to the increase of the extraction probability of the internally reflected photons through the patterns.

UR - https://www.scopus.com/pages/publications/35548942674

U2 - 10.1063/1.2802557

DO - 10.1063/1.2802557

M3 - Article

AN - SCOPUS:35548942674

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 171114

ER -

Increase of light extraction from GaN based light emitting diodes incorporating patterned structure by colloidal lithography

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