In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

Kyung Joong Kim; Dae Won Moon; Seung Hui Hong; Suk Ho Choi; Moon Seung Yang; Ji Hong Jhe; Jung H. Shin

doi:10.1016/j.tsf.2004.09.044

In situ characterization of stoichiometry for the buried SiO_x layers in SiO_x/SiO₂ superlattices and the effect on the photoluminescence property

Kyung Joong Kim
, Dae Won Moon
, Seung Hui Hong
, Suk Ho Choi
, Moon Seung Yang
, Ji Hong Jhe
, Jung H. Shin

Department of New Biology

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The stoichiometry of SiO_x layers in SiO_x/SiO ₂ superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiO_x films and SiO_x/SiO₂ SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO _x films and SiO_x/SiO₂ SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiO_x films and SiO_x/SiO₂ SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiO_x/SiO₂ SLs.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Thin Solid Films
Volume	478
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.09.044
State	Published - 1 May 2005

Bibliographical note

Funding Information:
This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science & Technology.

Keywords

Multilayer
Nanostructure
Silicon oxide
X-ray photoelectron spectroscopy

Access to Document

10.1016/j.tsf.2004.09.044

Cite this

@article{c6ed49c7f3174ea3bb776c8994445df0,

title = "In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property",

abstract = "The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.",

keywords = "Multilayer, Nanostructure, Silicon oxide, X-ray photoelectron spectroscopy",

author = "Kim, \{Kyung Joong\} and Moon, \{Dae Won\} and Hong, \{Seung Hui\} and Choi, \{Suk Ho\} and Yang, \{Moon Seung\} and Jhe, \{Ji Hong\} and Shin, \{Jung H.\}",

note = "Funding Information: This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science \& Technology.",

year = "2005",

month = may,

day = "1",

doi = "10.1016/j.tsf.2004.09.044",

language = "English",

volume = "478",

pages = "21--24",

journal = "Thin Solid Films",

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publisher = "Elsevier B.V.",

number = "1-2",

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TY - JOUR

T1 - In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

AU - Kim, Kyung Joong

AU - Moon, Dae Won

AU - Hong, Seung Hui

AU - Choi, Suk Ho

AU - Yang, Moon Seung

AU - Jhe, Ji Hong

AU - Shin, Jung H.

N1 - Funding Information: This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science & Technology.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.

AB - The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.

KW - Multilayer

KW - Nanostructure

KW - Silicon oxide

KW - X-ray photoelectron spectroscopy

UR - https://www.scopus.com/pages/publications/14544292377

U2 - 10.1016/j.tsf.2004.09.044

DO - 10.1016/j.tsf.2004.09.044

M3 - Article

AN - SCOPUS:14544292377

SN - 0040-6090

VL - 478

SP - 21

EP - 24

JO - Thin Solid Films

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