In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

Kyung Joong Kim; Dae Won Moon; Seung Hui Hong; Suk Ho Choi; Moon Seung Yang; Ji Hong Jhe; Jung H. Shin

doi:10.1016/j.tsf.2004.09.044

In situ characterization of stoichiometry for the buried SiO_x layers in SiO_x/SiO₂ superlattices and the effect on the photoluminescence property

Kyung Joong Kim, Dae Won Moon, Seung Hui Hong, Suk Ho Choi, Moon Seung Yang, Ji Hong Jhe, Jung H. Shin

Department of New Biology

Research output: Contribution to journal › Article › peer-review

35 Scopus citations

Abstract

The stoichiometry of SiO_x layers in SiO_x/SiO ₂ superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiO_x films and SiO_x/SiO₂ SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO _x films and SiO_x/SiO₂ SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiO_x films and SiO_x/SiO₂ SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiO_x/SiO₂ SLs.

Original language	English
Pages (from-to)	21-24
Number of pages	4
Journal	Thin Solid Films
Volume	478
Issue number	1-2
DOIs	https://doi.org/10.1016/j.tsf.2004.09.044
State	Published - 1 May 2005

Bibliographical note

Funding Information:
This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science & Technology.

Keywords

Multilayer
Nanostructure
Silicon oxide
X-ray photoelectron spectroscopy

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10.1016/j.tsf.2004.09.044

Cite this

@article{c6ed49c7f3174ea3bb776c8994445df0,

title = "In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property",

abstract = "The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.",

keywords = "Multilayer, Nanostructure, Silicon oxide, X-ray photoelectron spectroscopy",

author = "Kim, {Kyung Joong} and Moon, {Dae Won} and Hong, {Seung Hui} and Choi, {Suk Ho} and Yang, {Moon Seung} and Jhe, {Ji Hong} and Shin, {Jung H.}",

note = "Funding Information: This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science & Technology.",

year = "2005",

month = may,

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doi = "10.1016/j.tsf.2004.09.044",

language = "English",

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journal = "Thin Solid Films",

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T1 - In situ characterization of stoichiometry for the buried SiOx layers in SiOx/SiO2 superlattices and the effect on the photoluminescence property

AU - Kim, Kyung Joong

AU - Moon, Dae Won

AU - Hong, Seung Hui

AU - Choi, Suk Ho

AU - Yang, Moon Seung

AU - Jhe, Ji Hong

AU - Shin, Jung H.

N1 - Funding Information: This work was supported in part by NRL project by MOST of Korea. Suk-Ho Choi acknowledges partial support from the national research program for the 0.1 Terabit Nonvolatile Memory Development sponsored by Korea Ministry of Science & Technology.

PY - 2005/5/1

Y1 - 2005/5/1

N2 - The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.

AB - The stoichiometry of SiOx layers in SiOx/SiO 2 superlattice (SL) films grown by ion beam sputtering method was determined with in situ X-ray photoelectron spectroscopy. The effect of oxygen content on the photoluminescence (PL) properties was studied for the bulk-SiOx films and SiOx/SiO2 SLs. Maximum PL intensities were observed near x≈1.6 and x≈1.2 for the bulk-SiO x films and SiOx/SiO2 SLs, respectively. However, the dependence of PL intensity and energy on the film stoichiometry, when scaled for the overall film stoichiometry, was nearly the same for the bulk-SiOx films and SiOx/SiO2 SLs. This result indicates that the oxygen content is the main parameter to determine PL property of the SiOx/SiO2 SLs.

KW - Multilayer

KW - Nanostructure

KW - Silicon oxide

KW - X-ray photoelectron spectroscopy

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