Improvement of resistive memory switching in NiO using IrO2

D. C. Kim; M. J. Lee; S. E. Ahn; S. Seo; J. C. Park; I. K. Yoo; I. G. Baek; H. J. Kim; E. K. Yim; J. E. Lee; S. O. Park; H. S. Kim; U. In Chung; J. T. Moon; B. I. Ryu

doi:10.1063/1.2210087

Improvement of resistive memory switching in NiO using IrO₂

D. C. Kim, M. J. Lee, S. E. Ahn, S. Seo, J. C. Park, I. K. Yoo, I. G. Baek, H. J. Kim, E. K. Yim, J. E. Lee, S. O. Park, H. S. Kim, U. In Chung, J. T. Moon, B. I. Ryu

Division of Nanotechnology

Samsung

Research output: Contribution to journal › Article › peer-review

211 Scopus citations

Abstract

For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin Ir O2 layers between NiO and electrodes. The role of thin Ir O2 layers on NiO growth and memory switching stabilization are discussed.

Original language	English
Article number	232106
Journal	Applied Physics Letters
Volume	88
Issue number	23
DOIs	https://doi.org/10.1063/1.2210087
State	Published - 5 Jun 2006

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title = "Improvement of resistive memory switching in NiO using IrO2",

abstract = "For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin Ir O2 layers between NiO and electrodes. The role of thin Ir O2 layers on NiO growth and memory switching stabilization are discussed.",

author = "Kim, {D. C.} and Lee, {M. J.} and Ahn, {S. E.} and S. Seo and Park, {J. C.} and Yoo, {I. K.} and Baek, {I. G.} and Kim, {H. J.} and Yim, {E. K.} and Lee, {J. E.} and Park, {S. O.} and Kim, {H. S.} and Chung, {U. In} and Moon, {J. T.} and Ryu, {B. I.}",

year = "2006",

month = jun,

day = "5",

doi = "10.1063/1.2210087",

language = "English",

volume = "88",

journal = "Applied Physics Letters",

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publisher = "American Institute of Physics",

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TY - JOUR

T1 - Improvement of resistive memory switching in NiO using IrO2

AU - Kim, D. C.

AU - Lee, M. J.

AU - Ahn, S. E.

AU - Seo, S.

AU - Park, J. C.

AU - Yoo, I. K.

AU - Baek, I. G.

AU - Kim, H. J.

AU - Yim, E. K.

AU - Lee, J. E.

AU - Park, S. O.

AU - Kim, H. S.

AU - Chung, U. In

AU - Moon, J. T.

AU - Ryu, B. I.

PY - 2006/6/5

Y1 - 2006/6/5

N2 - For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin Ir O2 layers between NiO and electrodes. The role of thin Ir O2 layers on NiO growth and memory switching stabilization are discussed.

AB - For the development of resistive memory devices using NiO, improvements of several memory switching properties are required. In NiO memory cells with noble metal electrodes, broad dispersions of memory switching parameters are generally observed with continuous memory switchings. We report the improvements in minimizing the dispersions of all memory switching parameters using thin Ir O2 layers between NiO and electrodes. The role of thin Ir O2 layers on NiO growth and memory switching stabilization are discussed.

UR - http://www.scopus.com/inward/record.url?scp=33745013331&partnerID=8YFLogxK

U2 - 10.1063/1.2210087

DO - 10.1063/1.2210087

M3 - Article

AN - SCOPUS:33745013331

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 23

M1 - 232106

ER -

Improvement of resistive memory switching in NiO using IrO₂

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