Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation

Min Suk Oh; Dae Kue Hwang; Jae Hong Lim; Yong Seok Choi; Seong Ju Park

doi:10.1063/1.2764436

Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation

Min Suk Oh, Dae Kue Hwang, Jae Hong Lim, Yong Seok Choi, Seong Ju Park

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

50 Scopus citations

Abstract

High quality Pt Schottky contact to n -type ZnO was formed using KrF excimer laser. A pulsed laser irradiation of n -type ZnO in O2 pressure of 0.1 Mtorr, prior to Pt metal deposition, considerably improved the rectifying characteristics. The Schottky barrier heights of 0.73 and 0.85 eV were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. The cathodoluminescence and Auger electron spectroscopy results indicated that the improvement in rectifying characteristics can be attributed to a removal of surface carbon and hydrogen contaminants and a reduction of subsurface donorlike point defects by the KrF excimer laser irradiation.

Original language	English
Article number	042109
Journal	Applied Physics Letters
Volume	91
Issue number	4
DOIs	https://doi.org/10.1063/1.2764436
State	Published - 2007

Bibliographical note

Funding Information:
This work was partially supported by the Center for Distributed Sensor Network at GIST and the National Research Laboratory Program for Nanophotonic Semiconductors in Korea.

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@article{4a566c51f01a4aa0a3b509c33f5d8f99,

title = "Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation",

abstract = "High quality Pt Schottky contact to n -type ZnO was formed using KrF excimer laser. A pulsed laser irradiation of n -type ZnO in O2 pressure of 0.1 Mtorr, prior to Pt metal deposition, considerably improved the rectifying characteristics. The Schottky barrier heights of 0.73 and 0.85 eV were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. The cathodoluminescence and Auger electron spectroscopy results indicated that the improvement in rectifying characteristics can be attributed to a removal of surface carbon and hydrogen contaminants and a reduction of subsurface donorlike point defects by the KrF excimer laser irradiation.",

author = "Oh, \{Min Suk\} and Hwang, \{Dae Kue\} and Lim, \{Jae Hong\} and Choi, \{Yong Seok\} and Park, \{Seong Ju\}",

note = "Funding Information: This work was partially supported by the Center for Distributed Sensor Network at GIST and the National Research Laboratory Program for Nanophotonic Semiconductors in Korea.",

year = "2007",

doi = "10.1063/1.2764436",

language = "English",

volume = "91",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation

AU - Oh, Min Suk

AU - Hwang, Dae Kue

AU - Lim, Jae Hong

AU - Choi, Yong Seok

AU - Park, Seong Ju

N1 - Funding Information: This work was partially supported by the Center for Distributed Sensor Network at GIST and the National Research Laboratory Program for Nanophotonic Semiconductors in Korea.

PY - 2007

Y1 - 2007

N2 - High quality Pt Schottky contact to n -type ZnO was formed using KrF excimer laser. A pulsed laser irradiation of n -type ZnO in O2 pressure of 0.1 Mtorr, prior to Pt metal deposition, considerably improved the rectifying characteristics. The Schottky barrier heights of 0.73 and 0.85 eV were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. The cathodoluminescence and Auger electron spectroscopy results indicated that the improvement in rectifying characteristics can be attributed to a removal of surface carbon and hydrogen contaminants and a reduction of subsurface donorlike point defects by the KrF excimer laser irradiation.

AB - High quality Pt Schottky contact to n -type ZnO was formed using KrF excimer laser. A pulsed laser irradiation of n -type ZnO in O2 pressure of 0.1 Mtorr, prior to Pt metal deposition, considerably improved the rectifying characteristics. The Schottky barrier heights of 0.73 and 0.85 eV were obtained from the current-voltage (I-V) and capacitance-voltage (C-V) measurements, respectively. The cathodoluminescence and Auger electron spectroscopy results indicated that the improvement in rectifying characteristics can be attributed to a removal of surface carbon and hydrogen contaminants and a reduction of subsurface donorlike point defects by the KrF excimer laser irradiation.

UR - https://www.scopus.com/pages/publications/34547399083

U2 - 10.1063/1.2764436

DO - 10.1063/1.2764436

M3 - Article

AN - SCOPUS:34547399083

SN - 0003-6951

VL - 91

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

M1 - 042109

ER -

Improvement of Pt Schottky contacts to n-type ZnO by KrF excimer laser irradiation

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