@inproceedings{23a56fa23932448aaa11ece17a38c041,
title = "Improvement of light extraction efficiency in n-ZnO:Ga/I-ZnO/p-Si heterojunction LED using truncated pyramid patterned Si substrates",
abstract = "n-ZnO:Ga/i-ZnO/p-Si heterojunction light-emitting diodes (LEDs) were fabricated using patterned Si substrates having larger junction area than normal flat ones where recombined photons are generated. The patterned p-type Si substrates were prepared by anodization which is very cost competitive method, and the n-type ZnO:Ga films were deposited by high-temperature sputtering. The truncated patterning of the substrates resulted in approximately 75 % improvement in output power compared with the LED without the pattern, which was attributed to a 1.33-fold increase in the junction area through patterning.",
author = "Kim, {J. H.} and Choi, {M. K.} and Seo, {H. S.} and Han, {W. S.} and Kim, {Y. Y.} and Kong, {B. H.} and Cho, {H. K.} and Lee, {J. H.}",
year = "2009",
doi = "10.1149/1.3211175",
language = "English",
isbn = "9781566777469",
series = "ECS Transactions",
publisher = "Electrochemical Society Inc.",
number = "9",
pages = "177--182",
booktitle = "ECS Transactions - Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium",
edition = "9",
note = "Physics and Chemistry of Luminescence Materials, W. M. Yen Memorial Symposium - 216th ECS Meeting ; Conference date: 04-10-2009 Through 09-10-2009",
}