Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Myoung Jae Lee; Chang Bum Lee; Dongsoo Lee; Seung Ryul Lee; Jihyun Hur; Seung Eon Ahn; Man Chang; Young Bae Kim; U. In Chung; Chang Jung Kim; Dong Sik Kim; Hosun Lee

doi:10.1109/LED.2010.2048886

Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Myoung Jae Lee
, Chang Bum Lee
, Dongsoo Lee
, Seung Ryul Lee
, Jihyun Hur
, Seung Eon Ahn
, Man Chang
, Young Bae Kim
, U. In Chung
, Chang Jung Kim
, Dong Sik Kim
, Hosun Lee

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

Original language	English
Article number	5473041
Pages (from-to)	725-727
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2048886
State	Published - Jul 2010

Bibliographical note

Funding Information:
Manuscript received March 14, 2010; revised April 4, 2010; accepted April 9, 2010. Date of publication May 27, 2010; date of current version June 25, 2010. The work of H. Lee was supported by the Korean Government (MOST) under Korea Science and Engineering Foundation Grant R01-2007-000-20142-0. The review of this letter was arranged by Editor T. Wang. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S.-E. Ahn, M. Chang, Y.-B. Kim, U-I. Chung, and C.-J. Kim are with the Samsung Advanced Institute of Technology, Suwon 440-600, Korea (e-mail: myoungjae. [email protected]). D.-S. Kim is with Inha Technical College, Incheon 402-753, Korea. H. Lee is with Kyung Hee University, Suwon 449-701, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2048886

Keywords

Nonvolatile memory
resistance switching

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10.1109/LED.2010.2048886

Cite this

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title = "Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices",

abstract = "An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10\% to 30\%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.",

keywords = "Nonvolatile memory, resistance switching",

author = "Lee, \{Myoung Jae\} and Lee, \{Chang Bum\} and Dongsoo Lee and Lee, \{Seung Ryul\} and Jihyun Hur and Ahn, \{Seung Eon\} and Man Chang and Kim, \{Young Bae\} and Chung, \{U. In\} and Kim, \{Chang Jung\} and Kim, \{Dong Sik\} and Hosun Lee",

note = "Funding Information: Manuscript received March 14, 2010; revised April 4, 2010; accepted April 9, 2010. Date of publication May 27, 2010; date of current version June 25, 2010. The work of H. Lee was supported by the Korean Government (MOST) under Korea Science and Engineering Foundation Grant R01-2007-000-20142-0. The review of this letter was arranged by Editor T. Wang. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S.-E. Ahn, M. Chang, Y.-B. Kim, U-I. Chung, and C.-J. Kim are with the Samsung Advanced Institute of Technology, Suwon 440-600, Korea (e-mail: myoungjae. [email protected]). D.-S. Kim is with Inha Technical College, Incheon 402-753, Korea. H. Lee is with Kyung Hee University, Suwon 449-701, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2048886",

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AU - Hur, Jihyun

AU - Ahn, Seung Eon

AU - Chang, Man

AU - Kim, Young Bae

AU - Chung, U. In

AU - Kim, Chang Jung

AU - Kim, Dong Sik

AU - Lee, Hosun

N1 - Funding Information: Manuscript received March 14, 2010; revised April 4, 2010; accepted April 9, 2010. Date of publication May 27, 2010; date of current version June 25, 2010. The work of H. Lee was supported by the Korean Government (MOST) under Korea Science and Engineering Foundation Grant R01-2007-000-20142-0. The review of this letter was arranged by Editor T. Wang. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S.-E. Ahn, M. Chang, Y.-B. Kim, U-I. Chung, and C.-J. Kim are with the Samsung Advanced Institute of Technology, Suwon 440-600, Korea (e-mail: myoungjae. [email protected]). D.-S. Kim is with Inha Technical College, Incheon 402-753, Korea. H. Lee is with Kyung Hee University, Suwon 449-701, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2048886

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N2 - An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

AB - An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

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KW - resistance switching

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Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Abstract

Bibliographical note

Keywords

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