Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Myoung Jae Lee; Chang Bum Lee; Dongsoo Lee; Seung Ryul Lee; Jihyun Hur; Seung Eon Ahn; Man Chang; Young Bae Kim; U. In Chung; Chang Jung Kim; Dong Sik Kim; Hosun Lee

doi:10.1109/LED.2010.2048886

Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Myoung Jae Lee, Chang Bum Lee, Dongsoo Lee, Seung Ryul Lee, Jihyun Hur, Seung Eon Ahn, Man Chang, Young Bae Kim, U. In Chung, Chang Jung Kim, Dong Sik Kim, Hosun Lee

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

Original language	English
Article number	5473041
Pages (from-to)	725-727
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	31
Issue number	7
DOIs	https://doi.org/10.1109/LED.2010.2048886
State	Published - Jul 2010

Bibliographical note

Funding Information:
Manuscript received March 14, 2010; revised April 4, 2010; accepted April 9, 2010. Date of publication May 27, 2010; date of current version June 25, 2010. The work of H. Lee was supported by the Korean Government (MOST) under Korea Science and Engineering Foundation Grant R01-2007-000-20142-0. The review of this letter was arranged by Editor T. Wang. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S.-E. Ahn, M. Chang, Y.-B. Kim, U-I. Chung, and C.-J. Kim are with the Samsung Advanced Institute of Technology, Suwon 440-600, Korea (e-mail: myoungjae. [email protected]). D.-S. Kim is with Inha Technical College, Incheon 402-753, Korea. H. Lee is with Kyung Hee University, Suwon 449-701, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2048886

Keywords

Nonvolatile memory
resistance switching

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10.1109/LED.2010.2048886

Cite this

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title = "Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices",

abstract = "An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.",

keywords = "Nonvolatile memory, resistance switching",

author = "Lee, {Myoung Jae} and Lee, {Chang Bum} and Dongsoo Lee and Lee, {Seung Ryul} and Jihyun Hur and Ahn, {Seung Eon} and Man Chang and Kim, {Young Bae} and Chung, {U. In} and Kim, {Chang Jung} and Kim, {Dong Sik} and Hosun Lee",

note = "Funding Information: Manuscript received March 14, 2010; revised April 4, 2010; accepted April 9, 2010. Date of publication May 27, 2010; date of current version June 25, 2010. The work of H. Lee was supported by the Korean Government (MOST) under Korea Science and Engineering Foundation Grant R01-2007-000-20142-0. The review of this letter was arranged by Editor T. Wang. M.-J. Lee, C. B. Lee, D. Lee, S. R. Lee, J. Hur, S.-E. Ahn, M. Chang, Y.-B. Kim, U-I. Chung, and C.-J. Kim are with the Samsung Advanced Institute of Technology, Suwon 440-600, Korea (e-mail: myoungjae. [email protected]). D.-S. Kim is with Inha Technical College, Incheon 402-753, Korea. H. Lee is with Kyung Hee University, Suwon 449-701, Korea. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LED.2010.2048886",

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AU - Kim, Chang Jung

AU - Kim, Dong Sik

AU - Lee, Hosun

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AB - An alternative approach of controlling bistable resistance switching in NiO was investigated. By fabricating a multilayer structure of three NiOx layers with varying oxygen content, bistable resistance switching could be localized. By varying the enveloping oxygen partial pressure during NiOx layer deposition from 10% to 30%, improved resistance and switching voltage distribution from cycle to cycle was achieved. In addition, more localized switching could emulate sub-100-nm-sized cells showing decreased reset current values on the order of 100 μA. X-ray photon spectroscopy analysis shows a clear grading near the interfaces of successive NiO layers.

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Improved resistive switching reliability in graded NiO multilayer for resistive nonvolatile memory devices

Abstract

Bibliographical note

Keywords

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