Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Mir Kazem Omrani; Mehran Minbashi; Nafiseh Memarian; Dae Hwan Kim

doi:10.1016/j.sse.2017.12.004

Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Mir Kazem Omrani, Mehran Minbashi, Nafiseh Memarian, Dae Hwan Kim

Division of Energy Techonology

Semnan University

Research output: Contribution to journal › Article › peer-review

114 Scopus citations

Abstract

In this study, the CZTSSe (Cu₂ZnSn(S,Se)₄) solar cells, with Al/ZnO:Al/ZnO (i)/CdS/CZTSSe/Mo structure, have been simulated. The simulation results have been compared and validated with real experimental results. Next, suggestions for improving the performance of CZTSSe solar cell have been provided. A SnS layer has been used as back surface field (BSF) layer. Different physical parameters of SnS layer are investigated, and the optimum values are selected. It has been found that by inserting a BSF layer with optimum parameters, the efficiency of CZTSSe solar cell increases from 12.3% to 17.25% due to enhancement of both short-circuit current density (Jsc) and open circuit voltage (Voc). For this optimized cell structure, the maximum Jsc = 37.37 mA/cm², Voc = 0.605 V, and fill factor = 76.28% are obtained under 1.5 AM illumination.

Original language	English
Pages (from-to)	50-57
Number of pages	8
Journal	Solid-State Electronics
Volume	141
DOIs	https://doi.org/10.1016/j.sse.2017.12.004
State	Published - Mar 2018

Bibliographical note

Publisher Copyright:
© 2017 Elsevier Ltd

Keywords

Back surface field
CZTSSe solar cell
Numerical simulation
SnS layer

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10.1016/j.sse.2017.12.004

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@article{ed293891c604485fb5af71feb7d486d5,

title = "Improve the performance of CZTSSe solar cells by applying a SnS BSF layer",

abstract = "In this study, the CZTSSe (Cu2ZnSn(S,Se)4) solar cells, with Al/ZnO:Al/ZnO (i)/CdS/CZTSSe/Mo structure, have been simulated. The simulation results have been compared and validated with real experimental results. Next, suggestions for improving the performance of CZTSSe solar cell have been provided. A SnS layer has been used as back surface field (BSF) layer. Different physical parameters of SnS layer are investigated, and the optimum values are selected. It has been found that by inserting a BSF layer with optimum parameters, the efficiency of CZTSSe solar cell increases from 12.3\% to 17.25\% due to enhancement of both short-circuit current density (Jsc) and open circuit voltage (Voc). For this optimized cell structure, the maximum Jsc = 37.37 mA/cm2, Voc = 0.605 V, and fill factor = 76.28\% are obtained under 1.5 AM illumination.",

keywords = "Back surface field, CZTSSe solar cell, Numerical simulation, SnS layer",

author = "Omrani, \{Mir Kazem\} and Mehran Minbashi and Nafiseh Memarian and Kim, \{Dae Hwan\}",

note = "Publisher Copyright: {\textcopyright} 2017 Elsevier Ltd",

year = "2018",

month = mar,

doi = "10.1016/j.sse.2017.12.004",

language = "English",

volume = "141",

pages = "50--57",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd.",

}

TY - JOUR

T1 - Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

AU - Omrani, Mir Kazem

AU - Minbashi, Mehran

AU - Memarian, Nafiseh

AU - Kim, Dae Hwan

PY - 2018/3

Y1 - 2018/3

N2 - In this study, the CZTSSe (Cu2ZnSn(S,Se)4) solar cells, with Al/ZnO:Al/ZnO (i)/CdS/CZTSSe/Mo structure, have been simulated. The simulation results have been compared and validated with real experimental results. Next, suggestions for improving the performance of CZTSSe solar cell have been provided. A SnS layer has been used as back surface field (BSF) layer. Different physical parameters of SnS layer are investigated, and the optimum values are selected. It has been found that by inserting a BSF layer with optimum parameters, the efficiency of CZTSSe solar cell increases from 12.3% to 17.25% due to enhancement of both short-circuit current density (Jsc) and open circuit voltage (Voc). For this optimized cell structure, the maximum Jsc = 37.37 mA/cm2, Voc = 0.605 V, and fill factor = 76.28% are obtained under 1.5 AM illumination.

AB - In this study, the CZTSSe (Cu2ZnSn(S,Se)4) solar cells, with Al/ZnO:Al/ZnO (i)/CdS/CZTSSe/Mo structure, have been simulated. The simulation results have been compared and validated with real experimental results. Next, suggestions for improving the performance of CZTSSe solar cell have been provided. A SnS layer has been used as back surface field (BSF) layer. Different physical parameters of SnS layer are investigated, and the optimum values are selected. It has been found that by inserting a BSF layer with optimum parameters, the efficiency of CZTSSe solar cell increases from 12.3% to 17.25% due to enhancement of both short-circuit current density (Jsc) and open circuit voltage (Voc). For this optimized cell structure, the maximum Jsc = 37.37 mA/cm2, Voc = 0.605 V, and fill factor = 76.28% are obtained under 1.5 AM illumination.

KW - Back surface field

KW - CZTSSe solar cell

KW - Numerical simulation

KW - SnS layer

UR - https://www.scopus.com/pages/publications/85039756341

U2 - 10.1016/j.sse.2017.12.004

DO - 10.1016/j.sse.2017.12.004

M3 - Article

AN - SCOPUS:85039756341

SN - 0038-1101

VL - 141

SP - 50

EP - 57

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

Improve the performance of CZTSSe solar cells by applying a SnS BSF layer

Abstract

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Keywords

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