Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric

Kariyadan Remashan; Dae Kue Hwang; Seong Ju Park; Jae Hyung Jang

doi:10.1109/TED.2008.2003021

Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric

Kariyadan Remashan, Dae Kue Hwang, Seong Ju Park, Jae Hyung Jang

Division of Energy Techonology

Gwangju Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

18 Scopus citations

Abstract

Plasma-enhanced chemical vapor deposition grown silicon nitride gate insulator with high refractive index of 2.39 was employed as the source of hydrogen to hydrogenate zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate configuration. The hydrogenated TFTs exhibited a field-effect mobility of 7.8 cm²/V ·s, an on/off current ratio of 10⁶, and a subthreshold slope of 1.2 V/dec. In comparison, TFTs using silicon nitrides with lower refractive indices of 2.26, 1.92, and 1.80 showed relatively poor performance. Dynamic secondary ion mass spectroscopy study showed that the amount of hydrogen present in the ZnO TFT structures using high refractive index silicon nitride gate dielectric is higher than that in the TFT samples using low-refractive index silicon nitride, which indicate the evidence of hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric. The enhanced performance of the hydrogenated TFTs is attributed to the passivation of ZnO/dielectric interface states and doping of the channel by hydrogenation effect.

Original language	English
Pages (from-to)	2736-2743
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	55
Issue number	10
DOIs	https://doi.org/10.1109/TED.2008.2003021
State	Published - 2008

Bibliographical note

Funding Information:
Manuscript received March 13, 2008; revised May 16, 2008. Current version published September 24, 2008. This work was supported in part by the KOSEF under Grant R01-2007-000-10843-0 and in part by the SEAHERO program under Grant 07SEAHEROB01-03. The review of this paper was arranged by Editor C.-Y. Lu.

Keywords

High-refractive silicon nitride
Hydrogenation
Secondary ion mass spectroscopy (SIMS)
Zinc oxide (ZnO) thin-film transistors (TFTs)

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10.1109/TED.2008.2003021

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title = "Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric",

abstract = "Plasma-enhanced chemical vapor deposition grown silicon nitride gate insulator with high refractive index of 2.39 was employed as the source of hydrogen to hydrogenate zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate configuration. The hydrogenated TFTs exhibited a field-effect mobility of 7.8 cm2/V ·s, an on/off current ratio of 106, and a subthreshold slope of 1.2 V/dec. In comparison, TFTs using silicon nitrides with lower refractive indices of 2.26, 1.92, and 1.80 showed relatively poor performance. Dynamic secondary ion mass spectroscopy study showed that the amount of hydrogen present in the ZnO TFT structures using high refractive index silicon nitride gate dielectric is higher than that in the TFT samples using low-refractive index silicon nitride, which indicate the evidence of hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric. The enhanced performance of the hydrogenated TFTs is attributed to the passivation of ZnO/dielectric interface states and doping of the channel by hydrogenation effect.",

keywords = "High-refractive silicon nitride, Hydrogenation, Secondary ion mass spectroscopy (SIMS), Zinc oxide (ZnO) thin-film transistors (TFTs)",

author = "Kariyadan Remashan and Hwang, {Dae Kue} and Park, {Seong Ju} and Jang, {Jae Hyung}",

note = "Funding Information: Manuscript received March 13, 2008; revised May 16, 2008. Current version published September 24, 2008. This work was supported in part by the KOSEF under Grant R01-2007-000-10843-0 and in part by the SEAHERO program under Grant 07SEAHEROB01-03. The review of this paper was arranged by Editor C.-Y. Lu.",

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AU - Remashan, Kariyadan

AU - Hwang, Dae Kue

AU - Park, Seong Ju

AU - Jang, Jae Hyung

N1 - Funding Information: Manuscript received March 13, 2008; revised May 16, 2008. Current version published September 24, 2008. This work was supported in part by the KOSEF under Grant R01-2007-000-10843-0 and in part by the SEAHERO program under Grant 07SEAHEROB01-03. The review of this paper was arranged by Editor C.-Y. Lu.

PY - 2008

Y1 - 2008

N2 - Plasma-enhanced chemical vapor deposition grown silicon nitride gate insulator with high refractive index of 2.39 was employed as the source of hydrogen to hydrogenate zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate configuration. The hydrogenated TFTs exhibited a field-effect mobility of 7.8 cm2/V ·s, an on/off current ratio of 106, and a subthreshold slope of 1.2 V/dec. In comparison, TFTs using silicon nitrides with lower refractive indices of 2.26, 1.92, and 1.80 showed relatively poor performance. Dynamic secondary ion mass spectroscopy study showed that the amount of hydrogen present in the ZnO TFT structures using high refractive index silicon nitride gate dielectric is higher than that in the TFT samples using low-refractive index silicon nitride, which indicate the evidence of hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric. The enhanced performance of the hydrogenated TFTs is attributed to the passivation of ZnO/dielectric interface states and doping of the channel by hydrogenation effect.

AB - Plasma-enhanced chemical vapor deposition grown silicon nitride gate insulator with high refractive index of 2.39 was employed as the source of hydrogen to hydrogenate zinc oxide (ZnO) thin-film transistors (TFTs) with bottom-gate configuration. The hydrogenated TFTs exhibited a field-effect mobility of 7.8 cm2/V ·s, an on/off current ratio of 106, and a subthreshold slope of 1.2 V/dec. In comparison, TFTs using silicon nitrides with lower refractive indices of 2.26, 1.92, and 1.80 showed relatively poor performance. Dynamic secondary ion mass spectroscopy study showed that the amount of hydrogen present in the ZnO TFT structures using high refractive index silicon nitride gate dielectric is higher than that in the TFT samples using low-refractive index silicon nitride, which indicate the evidence of hydrogenation of ZnO TFTs by high refractive index silicon nitride gate dielectric. The enhanced performance of the hydrogenated TFTs is attributed to the passivation of ZnO/dielectric interface states and doping of the channel by hydrogenation effect.

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KW - Secondary ion mass spectroscopy (SIMS)

KW - Zinc oxide (ZnO) thin-film transistors (TFTs)

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Impact of hydrogenation of ZnO TFTs by plasma-deposited silicon nitride gate dielectric

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