Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Jongmin Kim; Duhwan Kim; Yongcheol Jo; Jaeseok Han; Hyeonseok Woo; Hyungsang Kim; K. K. Kim; J. P. Hong; Hyunsik Im

doi:10.1016/j.tsf.2015.05.002

Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Jongmin Kim, Duhwan Kim, Yongcheol Jo, Jaeseok Han, Hyeonseok Woo, Hyungsang Kim, K. K. Kim, J. P. Hong, Hyunsik Im

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

23 Scopus citations

Abstract

The role of the atomic interface in the resistive switching in Al-WO₃-Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO₃ film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics.

Original language	English
Pages (from-to)	188-193
Number of pages	6
Journal	Thin Solid Films
Volume	589
DOIs	https://doi.org/10.1016/j.tsf.2015.05.002
State	Published - 31 Aug 2015

Bibliographical note

Publisher Copyright:
© 2015 Elsevier B.V.

Keywords

Graphene
Hexagonal BN
Interfacial property
Resistive switching
Thin film

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10.1016/j.tsf.2015.05.002

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title = "Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory",

abstract = "The role of the atomic interface in the resistive switching in Al-WO3-Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO3 film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics.",

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doi = "10.1016/j.tsf.2015.05.002",

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AU - Kim, Jongmin

AU - Kim, Duhwan

AU - Jo, Yongcheol

AU - Han, Jaeseok

AU - Woo, Hyeonseok

AU - Kim, Hyungsang

AU - Kim, K. K.

AU - Hong, J. P.

AU - Im, Hyunsik

PY - 2015/8/31

Y1 - 2015/8/31

N2 - The role of the atomic interface in the resistive switching in Al-WO3-Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO3 film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics.

AB - The role of the atomic interface in the resistive switching in Al-WO3-Al devices is investigated by inserting metallic graphene or insulating hexagonal BN sheet between the top Al electrode and WO3 film. Clear reversible bipolar-type resistive switching phenomena were observed, regardless of the interface modification. However, endurance and retention properties were affected by the nature of the interface. While the device containing the graphene interface showed significantly improved performance, another device containing the hexagonal BN sheet showed degraded performance. These experimental findings suggest that atomic configuration of the electrode/oxide interface plays a key role in determining the resistive switching characteristics.

KW - Graphene

KW - Hexagonal BN

KW - Interfacial property

KW - Resistive switching

KW - Thin film

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JO - Thin Solid Films

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Impact of graphene and single-layer BN insertion on bipolar resistive switching characteristics in tungsten oxide resistive memory

Abstract

Bibliographical note

Keywords

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