Hysteretic rotational magnetization of pinned layer in NiO spin-valve

Cheol Gi Kim, Dong Young Kim, Do Gun Hwang, Sang Suk Lee, Chong Oh Kim

Research output: Contribution to journalArticlepeer-review

2 Scopus citations

Abstract

The magnetoresistance (MR) curves during the rotation of magnetic field in NiO spin-valve are well described by taking into account the involved magnetization process of free and pinned layers according to rotating field strength. In particular, hysteretic MR characteristics pronounced in a field strength of 1.5 times the exchange field are ascribed for by the viscosity effect on magnetization rotation of pinned layer. These analyses of MR curves provide a basis decomposing the MR components from each magnetization process of free and pinned layers.

Original languageEnglish
Pages (from-to)176-178
Number of pages3
JournalJournal of Magnetism and Magnetic Materials
Volume239
Issue number1-3
DOIs
StatePublished - Feb 2002

Bibliographical note

Funding Information:
This work was supported by the Korean Research Foundation under Grant No. KRF-99-042-E00106-E5105.

Keywords

  • Hysteresis
  • MR component
  • Spin-valve
  • Stoner-Wohlfarth model
  • Viscosity

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