Hybrid AMR/PHR ring sensor

Sunjong Oh; P. B. Patil; Tran Quang Hung; Byunghwa Lim; Migaku Takahashi; Dong Young Kim; Cheolgi Kim

doi:10.1016/j.ssc.2011.05.049

Hybrid AMR/PHR ring sensor

Sunjong Oh
, P. B. Patil
, Tran Quang Hung
, Byunghwa Lim
, Migaku Takahashi
, Dong Young Kim
, Cheolgi Kim

Department of Physics and Chemistry

Research output: Contribution to journal › Article › peer-review

28 Scopus citations

Abstract

The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.

Original language	English
Pages (from-to)	1248-1251
Number of pages	4
Journal	Solid State Communications
Volume	151
Issue number	18
DOIs	https://doi.org/10.1016/j.ssc.2011.05.049
State	Published - Sep 2011

Bibliographical note

Funding Information:
This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20026 ).

Keywords

A. Magnetic films and multilayers
A. Thin film
D. Electronic transport

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10.1016/j.ssc.2011.05.049

Cite this

@article{80de5d6ef7344b8da9c579f59cc7b784,

title = "Hybrid AMR/PHR ring sensor",

abstract = "The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.",

keywords = "A. Magnetic films and multilayers, A. Thin film, D. Electronic transport",

author = "Sunjong Oh and Patil, \{P. B.\} and Hung, \{Tran Quang\} and Byunghwa Lim and Migaku Takahashi and Kim, \{Dong Young\} and Cheolgi Kim",

note = "Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20026 ).",

year = "2011",

month = sep,

doi = "10.1016/j.ssc.2011.05.049",

language = "English",

volume = "151",

pages = "1248--1251",

journal = "Solid State Communications",

issn = "0038-1098",

publisher = "Elsevier Ltd.",

number = "18",

}

TY - JOUR

T1 - Hybrid AMR/PHR ring sensor

AU - Oh, Sunjong

AU - Patil, P. B.

AU - Hung, Tran Quang

AU - Lim, Byunghwa

AU - Takahashi, Migaku

AU - Kim, Dong Young

AU - Kim, Cheolgi

N1 - Funding Information: This research was supported by WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology ( R32-20026 ).

PY - 2011/9

Y1 - 2011/9

N2 - The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.

AB - The AMR (anisotropic magnetoresistance) and PHR (planar Hall resistance) contribution was analyzed for fabricated ring type sensor junctions in single and multiring bridge sensors, and their field sensitivity was examined. The voltage profile, i.e. the sum of AMR and PHR effects, reveal anti-symmetric behavior with the magnetic field with small offsets due to the self-balancing of ring arm resistances, but the voltage variations for the external field are additive for all junction components. The field sensitivity of the resistance for a single ring sensor is 9.5mΩOe, and its value monotonously increased to 102.6mΩOe for 17 rings with an enhanced active area.

KW - A. Magnetic films and multilayers

KW - A. Thin film

KW - D. Electronic transport

UR - https://www.scopus.com/pages/publications/79961170498

U2 - 10.1016/j.ssc.2011.05.049

DO - 10.1016/j.ssc.2011.05.049

M3 - Article

AN - SCOPUS:79961170498

SN - 0038-1098

VL - 151

SP - 1248

EP - 1251

JO - Solid State Communications

JF - Solid State Communications

IS - 18

ER -

Hybrid AMR/PHR ring sensor

Abstract

Bibliographical note

Keywords

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