Hole injection layer by ion beam assisted deposition for organic electroluminescence devices

Research output: Contribution to journalConference articlepeer-review

Abstract

The ultra thin hole injection layer (HIL) was deposited on an indium-tin-oxide (ITO) anode by using an ion beam assisted deposition (IBAD) for the fabrication of an polymeric electroluminescence device for the first time. The device with the HIL deposited by IBAD has higher external quantum efficiency than the device with the HIL by conventional thermal evaporation. It is found that the deposited HIL by IBAD has high surface coverage on ITO anode in a few nm regions because the HIL prepared has high adatom mobility by ion beam energy.

Original languageEnglish
Pages (from-to)1619-1622
Number of pages4
JournalProceedings of International Meeting on Information Display
Volume2
StatePublished - 2006
Event5th International Meeting on Information Display - Seoul, Korea, Republic of
Duration: 19 Jul 200523 Jul 2005

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