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Highly scalable non-volatile resistive memory using simple binary oxide driven by asymmetric unipolar voltage pulses
I. G. Baek, M. S. Lee, S. Seo, M. J. Lee, D. H. Seo, D. S. Suh, J. C. Park, S. O. Park, H. S. Kim, I. K. Yoo, U. In Chung, J. T. Moon
Research output: Contribution to journal › Conference article › peer-review
694
Scopus
citations