Highly reproducible planar Sb2S3-sensitized solar cells based on atomic layer deposition

Dae Hwan Kim; Sang Ju Lee; Mi Sun Park; Jin Kyu Kang; Jin Hyuck Heo; Sang Hyuk Im; Shi Joon Sung

doi:10.1039/c4nr04148h

Highly reproducible planar Sb₂S₃-sensitized solar cells based on atomic layer deposition

Dae Hwan Kim, Sang Ju Lee, Mi Sun Park, Jin Kyu Kang, Jin Hyuck Heo, Sang Hyuk Im, Shi Joon Sung

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

196 Scopus citations

Abstract

A high-quality Sb₂S₃ thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb₂S₃ absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb₂S₃ absorbers formed on a rough surface of dense blocking TiO₂/F-doped SnO₂ (bl-TiO₂/FTO) substrate. The planar ALD-Sb₂S₃ solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb₂S₃/bl-TiO₂/FTO showed significantly improved power conversion efficiency of 5.77% at 1 sun condition and narrow efficiency deviation, whereas the planar CBD-Sb₂S₃ solar cells exhibited 2.17% power conversion efficiency. The high efficiency and good reproducibility of ALD-Sb₂S₃ solar cell devices is attributed to reduced backward recombination because of the inhibition of oxide defects within ALD-Sb₂S₃ absorber and the conformal deposition of very uniform Sb₂S₃ absorbers on the blocking TiO₂ surface by ALD process.

Original language	English
Pages (from-to)	14549-14554
Number of pages	6
Journal	Nanoscale
Volume	6
Issue number	23
DOIs	https://doi.org/10.1039/c4nr04148h
State	Published - 7 Dec 2014

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© The Royal Society of Chemistry 2014.

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@article{aa2665ce1d8f4ec88f60097178dcafde,

title = "Highly reproducible planar Sb2S3-sensitized solar cells based on atomic layer deposition",

abstract = "A high-quality Sb2S3 thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb2S3 absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb2S3 absorbers formed on a rough surface of dense blocking TiO2/F-doped SnO2 (bl-TiO2/FTO) substrate. The planar ALD-Sb2S3 solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb2S3/bl-TiO2/FTO showed significantly improved power conversion efficiency of 5.77% at 1 sun condition and narrow efficiency deviation, whereas the planar CBD-Sb2S3 solar cells exhibited 2.17% power conversion efficiency. The high efficiency and good reproducibility of ALD-Sb2S3 solar cell devices is attributed to reduced backward recombination because of the inhibition of oxide defects within ALD-Sb2S3 absorber and the conformal deposition of very uniform Sb2S3 absorbers on the blocking TiO2 surface by ALD process.",

author = "Kim, {Dae Hwan} and Lee, {Sang Ju} and Park, {Mi Sun} and Kang, {Jin Kyu} and Heo, {Jin Hyuck} and Im, {Sang Hyuk} and Sung, {Shi Joon}",

note = "Publisher Copyright: {\textcopyright} The Royal Society of Chemistry 2014.",

year = "2014",

month = dec,

day = "7",

doi = "10.1039/c4nr04148h",

language = "English",

volume = "6",

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T1 - Highly reproducible planar Sb2S3-sensitized solar cells based on atomic layer deposition

AU - Kim, Dae Hwan

AU - Lee, Sang Ju

AU - Park, Mi Sun

AU - Kang, Jin Kyu

AU - Heo, Jin Hyuck

AU - Im, Sang Hyuk

AU - Sung, Shi Joon

PY - 2014/12/7

Y1 - 2014/12/7

N2 - A high-quality Sb2S3 thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb2S3 absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb2S3 absorbers formed on a rough surface of dense blocking TiO2/F-doped SnO2 (bl-TiO2/FTO) substrate. The planar ALD-Sb2S3 solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb2S3/bl-TiO2/FTO showed significantly improved power conversion efficiency of 5.77% at 1 sun condition and narrow efficiency deviation, whereas the planar CBD-Sb2S3 solar cells exhibited 2.17% power conversion efficiency. The high efficiency and good reproducibility of ALD-Sb2S3 solar cell devices is attributed to reduced backward recombination because of the inhibition of oxide defects within ALD-Sb2S3 absorber and the conformal deposition of very uniform Sb2S3 absorbers on the blocking TiO2 surface by ALD process.

AB - A high-quality Sb2S3 thin-absorber with controllable thickness was reproducibly formed by atomic layer deposition (ALD) technique. Compared with conventional chemical bath deposition (CBD), the Sb2S3 absorber deposited by ALD did not contain oxide or oxygen impurities and showed a very uniform thickness of Sb2S3 absorbers formed on a rough surface of dense blocking TiO2/F-doped SnO2 (bl-TiO2/FTO) substrate. The planar ALD-Sb2S3 solar cells comprised of Au/Poly-3-hexylthiophene/ALD-Sb2S3/bl-TiO2/FTO showed significantly improved power conversion efficiency of 5.77% at 1 sun condition and narrow efficiency deviation, whereas the planar CBD-Sb2S3 solar cells exhibited 2.17% power conversion efficiency. The high efficiency and good reproducibility of ALD-Sb2S3 solar cell devices is attributed to reduced backward recombination because of the inhibition of oxide defects within ALD-Sb2S3 absorber and the conformal deposition of very uniform Sb2S3 absorbers on the blocking TiO2 surface by ALD process.

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DO - 10.1039/c4nr04148h

M3 - Article

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SN - 2040-3364

VL - 6

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EP - 14554

JO - Nanoscale

JF - Nanoscale

IS - 23

ER -

Highly reproducible planar Sb₂S₃-sensitized solar cells based on atomic layer deposition

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