High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

Dae Kue Hwang; Kang Pil Kim; Dae Hwan Kim

doi:10.1016/j.tsf.2013.03.063

High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

Dae Kue Hwang, Kang Pil Kim, Dae Hwan Kim

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

10 Scopus citations

Abstract

Nonpolar, a-plane(112̄0)ZnO thin films were epitaxially grown on r-plane(11̄02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O ₂ partial pressure of the Ar/O₂ sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(112̄0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O ₂ ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O₂ ratio: 1/2), enhancing the lateral growth along the c-axis direction.

Original language	English
Pages (from-to)	18-21
Number of pages	4
Journal	Thin Solid Films
Volume	546
DOIs	https://doi.org/10.1016/j.tsf.2013.03.063
State	Published - 1 Nov 2013

Bibliographical note

Funding Information:
This work was supported by the DGIST R&D Program of the Ministry of Education, Science and Technology of Korea ( 13-EN-04 ).

Keywords

Compound semiconductor
II-VI
Nonpolar
Sputtering
Thin film
ZnO

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10.1016/j.tsf.2013.03.063

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@article{92e33b562e2b4413b313b2ba615e4dd8,

title = "High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering",

abstract = "Nonpolar, a-plane(11{\=2}0)ZnO thin films were epitaxially grown on r-plane(1{\=1}02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O 2 partial pressure of the Ar/O2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(11{\=2}0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O 2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O2 ratio: 1/2), enhancing the lateral growth along the c-axis direction.",

keywords = "Compound semiconductor, II-VI, Nonpolar, Sputtering, Thin film, ZnO",

author = "Hwang, \{Dae Kue\} and Kim, \{Kang Pil\} and Kim, \{Dae Hwan\}",

note = "Funding Information: This work was supported by the DGIST R\&D Program of the Ministry of Education, Science and Technology of Korea ( 13-EN-04 ).",

year = "2013",

month = nov,

day = "1",

doi = "10.1016/j.tsf.2013.03.063",

language = "English",

volume = "546",

pages = "18--21",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

AU - Hwang, Dae Kue

AU - Kim, Kang Pil

AU - Kim, Dae Hwan

N1 - Funding Information: This work was supported by the DGIST R&D Program of the Ministry of Education, Science and Technology of Korea ( 13-EN-04 ).

PY - 2013/11/1

Y1 - 2013/11/1

N2 - Nonpolar, a-plane(112̄0)ZnO thin films were epitaxially grown on r-plane(11̄02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O 2 partial pressure of the Ar/O2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(112̄0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O 2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O2 ratio: 1/2), enhancing the lateral growth along the c-axis direction.

AB - Nonpolar, a-plane(112̄0)ZnO thin films were epitaxially grown on r-plane(11̄02)sapphire substrate by radio frequency magnetron sputtering. The influence of oxygen partial pressure was studied. With increasing O 2 partial pressure of the Ar/O2 sputtering gas, the ridge-like facet structure of the ZnO film altered to a smooth film. Full width half maximum of X-ray rocking curves for the on-axis(112̄0)reflections were 0.45°, 0.36°, 0.09° and 0.25° for samples grown at Ar/O 2 ratios of 2/1, 1/1, 1/2 and 1/3, respectively. A smooth surface could be obtained under oxygen rich conditions (Ar/O2 ratio: 1/2), enhancing the lateral growth along the c-axis direction.

KW - Compound semiconductor

KW - II-VI

KW - Nonpolar

KW - Sputtering

KW - Thin film

KW - ZnO

UR - https://www.scopus.com/pages/publications/84885296654

U2 - 10.1016/j.tsf.2013.03.063

DO - 10.1016/j.tsf.2013.03.063

M3 - Article

AN - SCOPUS:84885296654

SN - 0040-6090

VL - 546

SP - 18

EP - 21

JO - Thin Solid Films

JF - Thin Solid Films

ER -

High-quality nonpolar ZnO thin films grown on r-plane sapphire by radio frequency-magnetron sputtering

Abstract

Bibliographical note

Keywords

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