High performance ZnO nanowire field effect transistor

S. N. Cha; J. E. Jang; Y. Choi; G. W. Ho; D. J. Kang; D. G. Hasko; M. E. Welland; G. A.J. Amaratunga

doi:10.1109/ESSDER.2005.1546624

High performance ZnO nanowire field effect transistor

S. N. Cha, J. E. Jang, Y. Choi, G. W. Ho, D. J. Kang, D. G. Hasko, M. E. Welland, G. A.J. Amaratunga

Department of Electrical Engineering and Computer Science

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm²/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 10⁶.

Original language	English
Title of host publication	Proceedings of ESSDERC 2005
Subtitle of host publication	35th European Solid-State Device Research Conference
Pages	217-220
Number of pages	4
DOIs	https://doi.org/10.1109/ESSDER.2005.1546624
State	Published - 2005
Event	ESSDERC 2005: 35th European Solid-State Device Research Conference - Grenoble, France Duration: 12 Sep 2005 → 16 Sep 2005

Publication series

Name	Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference
Volume	2005

Conference

Conference	ESSDERC 2005: 35th European Solid-State Device Research Conference
Country/Territory	France
City	Grenoble
Period	12/09/05 → 16/09/05

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10.1109/ESSDER.2005.1546624

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Cha, S. N., Jang, J. E., Choi, Y., Ho, G. W., Kang, D. J., Hasko, D. G., Welland, M. E., & Amaratunga, G. A. J. (2005). High performance ZnO nanowire field effect transistor. In Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference (pp. 217-220). Article 1546624 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005). https://doi.org/10.1109/ESSDER.2005.1546624

@inproceedings{a222544fb6c1427d9bfd8e68ce7b3d42,

title = "High performance ZnO nanowire field effect transistor",

abstract = "A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm2/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 106.",

author = "Cha, \{S. N.\} and Jang, \{J. E.\} and Y. Choi and Ho, \{G. W.\} and Kang, \{D. J.\} and Hasko, \{D. G.\} and Welland, \{M. E.\} and Amaratunga, \{G. A.J.\}",

year = "2005",

doi = "10.1109/ESSDER.2005.1546624",

language = "English",

isbn = "0780392035",

series = "Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference",

pages = "217--220",

booktitle = "Proceedings of ESSDERC 2005",

note = "ESSDERC 2005: 35th European Solid-State Device Research Conference ; Conference date: 12-09-2005 Through 16-09-2005",

}

Cha, SN, Jang, JE, Choi, Y, Ho, GW, Kang, DJ, Hasko, DG, Welland, ME & Amaratunga, GAJ 2005, High performance ZnO nanowire field effect transistor. in Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference., 1546624, Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference, vol. 2005, pp. 217-220, ESSDERC 2005: 35th European Solid-State Device Research Conference, Grenoble, France, 12/09/05. https://doi.org/10.1109/ESSDER.2005.1546624

High performance ZnO nanowire field effect transistor. / Cha, S. N.; Jang, J. E.; Choi, Y. et al.
Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference. 2005. p. 217-220 1546624 (Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High performance ZnO nanowire field effect transistor

AU - Cha, S. N.

AU - Jang, J. E.

AU - Choi, Y.

AU - Ho, G. W.

AU - Kang, D. J.

AU - Hasko, D. G.

AU - Welland, M. E.

AU - Amaratunga, G. A.J.

PY - 2005

Y1 - 2005

N2 - A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm2/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 106.

AB - A zinc oxide (ZnO) nanowire field effect transistor having the highest mobility and lowest subthreshold slope obtained to date (from ZnO) is reported. The device consists of a single nanowire with self-aligned gate electrodes having well defined nano scale spacing, independent of lithographic definition. The fabricated device exhibits a transconductance of 3.06 μS, a mobility of 450 cm2/Vs and a subthreshold swing of 129 mV/decade. The transistor also shows an on/off current ratio of 106.

UR - https://www.scopus.com/pages/publications/33751400017

U2 - 10.1109/ESSDER.2005.1546624

DO - 10.1109/ESSDER.2005.1546624

M3 - Conference contribution

AN - SCOPUS:33751400017

SN - 0780392035

SN - 9780780392038

T3 - Proceedings of ESSDERC 2005: 35th European Solid-State Device Research Conference

SP - 217

EP - 220

BT - Proceedings of ESSDERC 2005

T2 - ESSDERC 2005: 35th European Solid-State Device Research Conference

Y2 - 12 September 2005 through 16 September 2005

ER -

High performance ZnO nanowire field effect transistor

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