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High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes
- S. N. Cha
- , J. E. Jang
- , Y. Choi
- , G. A.J. Amaratunga
- , G. W. Ho
- , M. E. Welland
- , D. G. Hasko
- , D. J. Kang
- , J. M. Kim
Research output: Contribution to journal › Article › peer-review
138
Scopus
citations