High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

S. N. Cha; J. E. Jang; Y. Choi; G. A.J. Amaratunga; G. W. Ho; M. E. Welland; D. G. Hasko; D. J. Kang; J. M. Kim

doi:10.1063/1.2416249

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

S. N. Cha
, J. E. Jang
, Y. Choi
, G. A.J. Amaratunga
, G. W. Ho
, M. E. Welland
, D. G. Hasko
, D. J. Kang
, J. M. Kim

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

138 Scopus citations

Abstract

A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

Original language	English
Article number	263102
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2416249
State	Published - 2006

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title = "High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes",

abstract = "A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.",

author = "Cha, \{S. N.\} and Jang, \{J. E.\} and Y. Choi and Amaratunga, \{G. A.J.\} and Ho, \{G. W.\} and Welland, \{M. E.\} and Hasko, \{D. G.\} and Kang, \{D. J.\} and Kim, \{J. M.\}",

year = "2006",

doi = "10.1063/1.2416249",

language = "English",

volume = "89",

journal = "Applied Physics Letters",

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TY - JOUR

T1 - High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

AU - Cha, S. N.

AU - Jang, J. E.

AU - Choi, Y.

AU - Amaratunga, G. A.J.

AU - Ho, G. W.

AU - Welland, M. E.

AU - Hasko, D. G.

AU - Kang, D. J.

AU - Kim, J. M.

PY - 2006

Y1 - 2006

N2 - A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

AB - A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

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U2 - 10.1063/1.2416249

DO - 10.1063/1.2416249

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SN - 0003-6951

VL - 89

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 26

M1 - 263102

ER -

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

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