High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

S. N. Cha; J. E. Jang; Y. Choi; G. A.J. Amaratunga; G. W. Ho; M. E. Welland; D. G. Hasko; D. J. Kang; J. M. Kim

doi:10.1063/1.2416249

High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

S. N. Cha, J. E. Jang, Y. Choi, G. A.J. Amaratunga, G. W. Ho, M. E. Welland, D. G. Hasko, D. J. Kang, J. M. Kim

Department of Electrical Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

136 Scopus citations

Abstract

A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

Original language	English
Article number	263102
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2416249
State	Published - 2006

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title = "High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes",

abstract = "A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.",

author = "Cha, {S. N.} and Jang, {J. E.} and Y. Choi and Amaratunga, {G. A.J.} and Ho, {G. W.} and Welland, {M. E.} and Hasko, {D. G.} and Kang, {D. J.} and Kim, {J. M.}",

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doi = "10.1063/1.2416249",

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T1 - High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

AU - Cha, S. N.

AU - Jang, J. E.

AU - Choi, Y.

AU - Amaratunga, G. A.J.

AU - Ho, G. W.

AU - Welland, M. E.

AU - Hasko, D. G.

AU - Kang, D. J.

AU - Kim, J. M.

PY - 2006

Y1 - 2006

N2 - A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

AB - A field effect transistor (FET) using a zinc oxide nanowire with significantly enhanced performance is demonstrated. The device consists of single nanowire and self-aligned gate electrodes with well defined nanosize gaps separating them from the suspended nanowire. The fabricated FET exhibits excellent performance with a transconductance of 3.06 μS, a field effect mobility of 928 cm2 V s, and an on/off current ratio of 106. The electrical characteristics are the best obtained to date for a ZnO transistor. The FET has a n -type channel and operates in enhancement mode. The results are close to those reported previously for p -type carbon nanotube (CNT) FETs. This raises the possibility of using ZnO as the n -type FET with a CNT as the p -type FET in nanoscale complementary logic circuits.

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JF - Applied Physics Letters

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High performance ZnO nanowire field effect transistor using self-aligned nanogap gate electrodes

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