High-performance nanowire oxide photo-thin film transistor

Seung Eon Ahn; Sanghun Jeon; Youg Woo Jeon; Changjung Kim; Myoung Jae Lee; Chang Won Lee; Jongbong Park; Ihun Song; Arokia Nathan; Sungsik Lee; U. In Chung

doi:10.1002/adma201301102

High-performance nanowire oxide photo-thin film transistor

Seung Eon Ahn
, Sanghun Jeon
, Youg Woo Jeon
, Changjung Kim
, Myoung Jae Lee
, Chang Won Lee
, Jongbong Park
, Ihun Song
, Arokia Nathan
, Sungsik Lee
, U. In Chung

Division of Nanotechnology

Research output: Contribution to journal › Article › peer-review

51 Scopus citations

Abstract

A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing. The device characteristics are good, including endurance of up to 10⁶ test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

Original language	English
Pages (from-to)	5549-5554
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	39
DOIs	https://doi.org/10.1002/adma201301102
State	Published - 18 Oct 2013

Keywords

amorphous oxide semiconductors
displays
photosensors
phototransistors
thin-film transistors
transistors

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10.1002/adma201301102

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title = "High-performance nanowire oxide photo-thin film transistor",

abstract = "A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing. The device characteristics are good, including endurance of up to 106 test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.",

keywords = "amorphous oxide semiconductors, displays, photosensors, phototransistors, thin-film transistors, transistors",

author = "Ahn, \{Seung Eon\} and Sanghun Jeon and Jeon, \{Youg Woo\} and Changjung Kim and Lee, \{Myoung Jae\} and Lee, \{Chang Won\} and Jongbong Park and Ihun Song and Arokia Nathan and Sungsik Lee and Chung, \{U. In\}",

year = "2013",

month = oct,

day = "18",

doi = "10.1002/adma201301102",

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journal = "Advanced Materials",

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T1 - High-performance nanowire oxide photo-thin film transistor

AU - Ahn, Seung Eon

AU - Jeon, Sanghun

AU - Jeon, Youg Woo

AU - Kim, Changjung

AU - Lee, Myoung Jae

AU - Lee, Chang Won

AU - Park, Jongbong

AU - Song, Ihun

AU - Nathan, Arokia

AU - Lee, Sungsik

AU - Chung, U. In

PY - 2013/10/18

Y1 - 2013/10/18

N2 - A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing. The device characteristics are good, including endurance of up to 106 test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

AB - A gate-modulated nanowire oxide photosensor is fabricated by electron-beam lithography and conventional dry etch processing. The device characteristics are good, including endurance of up to 106 test cycles, and gate-pulse excitation is used to remove persistent photoconductivity. The viability of nanowire oxide phototransistors for high speed and high resolution applications is demonstrated, thus potentially expanding the scope of exploitation of touch-free interactive displays.

KW - amorphous oxide semiconductors

KW - displays

KW - photosensors

KW - phototransistors

KW - thin-film transistors

KW - transistors

UR - https://www.scopus.com/pages/publications/84886286896

U2 - 10.1002/adma201301102

DO - 10.1002/adma201301102

M3 - Article

AN - SCOPUS:84886286896

SN - 0935-9648

VL - 25

SP - 5549

EP - 5554

JO - Advanced Materials

JF - Advanced Materials

IS - 39

ER -

High-performance nanowire oxide photo-thin film transistor

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Keywords

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