High-performance GaN-based light-emitting diode using high-transparency NiAuAl -doped ZnO composite contacts

Sung Pyo Jung; Denise Ullery; Chien Hung Lin; Henry P. Lee; Jae Hong Lim; Dae Kue Hwang; Ja Yeon Kim; Eun Jeong Yang; Seong Ju Park

doi:10.1063/1.2120913

High-performance GaN-based light-emitting diode using high-transparency NiAuAl -doped ZnO composite contacts

Sung Pyo Jung
, Denise Ullery
, Chien Hung Lin
, Henry P. Lee
, Jae Hong Lim
, Dae Kue Hwang
, Ja Yeon Kim
, Eun Jeong Yang
, Seong Ju Park

Division of Energy Techonology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm) Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36-3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.

Original language	English
Article number	181107
Pages (from-to)	1-3
Number of pages	3
Journal	Applied Physics Letters
Volume	87
Issue number	18
DOIs	https://doi.org/10.1063/1.2120913
State	Published - 31 Oct 2005

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10.1063/1.2120913

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title = "High-performance GaN-based light-emitting diode using high-transparency NiAuAl -doped ZnO composite contacts",

abstract = "We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm) Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74\% at 40 mA and forward operating voltages in the range of 3.36-3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.",

author = "Jung, \{Sung Pyo\} and Denise Ullery and Lin, \{Chien Hung\} and Lee, \{Henry P.\} and Lim, \{Jae Hong\} and Hwang, \{Dae Kue\} and Kim, \{Ja Yeon\} and Yang, \{Eun Jeong\} and Park, \{Seong Ju\}",

year = "2005",

month = oct,

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doi = "10.1063/1.2120913",

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T1 - High-performance GaN-based light-emitting diode using high-transparency NiAuAl -doped ZnO composite contacts

AU - Jung, Sung Pyo

AU - Ullery, Denise

AU - Lin, Chien Hung

AU - Lee, Henry P.

AU - Lim, Jae Hong

AU - Hwang, Dae Kue

AU - Kim, Ja Yeon

AU - Yang, Eun Jeong

AU - Park, Seong Ju

PY - 2005/10/31

Y1 - 2005/10/31

N2 - We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm) Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36-3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.

AB - We report on a high-transparency low-resistance composite contact structure on p-GaN for light-emitting diode applications. The structure consists of a thin Ni (5 nm) Au (5 nm) layer overcoated with a sputtered Al-doped ZnO (170 nm) layer. Enhancement in light emission intensity as high as 74% at 40 mA and forward operating voltages in the range of 3.36-3.48 V at 20 mA are obtained for these devices using a two-step thermal annealing process.

UR - https://www.scopus.com/pages/publications/27344449195

U2 - 10.1063/1.2120913

DO - 10.1063/1.2120913

M3 - Article

AN - SCOPUS:27344449195

SN - 0003-6951

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 18

M1 - 181107

ER -

High-performance GaN-based light-emitting diode using high-transparency NiAuAl -doped ZnO composite contacts

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