High performance and the low voltage operating InGaZnO thin film transistor

Dae Ho Son; Dae Hwan Kim; Shi Joon Sung; Eun Ae Jung; Jin Kyu Kang

doi:10.1016/j.cap.2010.03.012

High performance and the low voltage operating InGaZnO thin film transistor

Dae Ho Son
, Dae Hwan Kim
, Shi Joon Sung
, Eun Ae Jung
, Jin Kyu Kang

Division of Energy Techonology

Daegu Gyeongbuk Institute of Science and Technology

Research output: Contribution to journal › Article › peer-review

31 Scopus citations

Abstract

In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO₂ gate dielectric or a hafnium oxide (HfO₂) gate dielectric. The fabricated HfO ₂/IGZO TFTs have higher field-effect mobility than the SiO ₂/IGZO TFTs. The HfO₂/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm² V^-1 s ^-1, a low sub-threshold swing of 90 mV dec^-1, and a threshold voltage of 0.67 V, respectively.

Original language	English
Pages (from-to)	e157-e160
Journal	Current Applied Physics
Volume	10
Issue number	4 SUPPL.
DOIs	https://doi.org/10.1016/j.cap.2010.03.012
State	Published - Nov 2010

Bibliographical note

Funding Information:
This work was supported by the DGIST Basic Research Program of the MEST (Ministry of Education, Science & Technology).

Keywords

HfO
High-k material
Low voltage operating device
Metal oxide
Thin film transistor

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10.1016/j.cap.2010.03.012

Cite this

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title = "High performance and the low voltage operating InGaZnO thin film transistor",

abstract = "In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively.",

keywords = "HfO, High-k material, Low voltage operating device, Metal oxide, Thin film transistor",

author = "Son, \{Dae Ho\} and Kim, \{Dae Hwan\} and Sung, \{Shi Joon\} and Jung, \{Eun Ae\} and Kang, \{Jin Kyu\}",

note = "Funding Information: This work was supported by the DGIST Basic Research Program of the MEST (Ministry of Education, Science \& Technology).",

year = "2010",

month = nov,

doi = "10.1016/j.cap.2010.03.012",

language = "English",

volume = "10",

pages = "e157--e160",

journal = "Current Applied Physics",

issn = "1567-1739",

publisher = "Elsevier B.V.",

number = "4 SUPPL.",

}

TY - JOUR

T1 - High performance and the low voltage operating InGaZnO thin film transistor

AU - Son, Dae Ho

AU - Kim, Dae Hwan

AU - Sung, Shi Joon

AU - Jung, Eun Ae

AU - Kang, Jin Kyu

N1 - Funding Information: This work was supported by the DGIST Basic Research Program of the MEST (Ministry of Education, Science & Technology).

PY - 2010/11

Y1 - 2010/11

N2 - In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively.

AB - In this study, we compare the electrical properties of inverted-coplanar- type InGaZnO thin-film transistors (IGZO TFTs) deposited by RF sputtering at room temperature on a thermally grown SiO2 gate dielectric or a hafnium oxide (HfO2) gate dielectric. The fabricated HfO 2/IGZO TFTs have higher field-effect mobility than the SiO 2/IGZO TFTs. The HfO2/InGaZnO TFTs show good performance with a high field-effect mobility of 25.8 cm2 V-1 s -1, a low sub-threshold swing of 90 mV dec-1, and a threshold voltage of 0.67 V, respectively.

KW - HfO

KW - High-k material

KW - Low voltage operating device

KW - Metal oxide

KW - Thin film transistor

UR - https://www.scopus.com/pages/publications/78449297441

U2 - 10.1016/j.cap.2010.03.012

DO - 10.1016/j.cap.2010.03.012

M3 - Article

AN - SCOPUS:78449297441

SN - 1567-1739

VL - 10

SP - e157-e160

JO - Current Applied Physics

JF - Current Applied Physics

IS - 4 SUPPL.

ER -

High performance and the low voltage operating InGaZnO thin film transistor

Abstract

Bibliographical note

Keywords

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